Mechanisms of Intersubband Transition in n-Type III-V Quantum Well Superlattice and Improvement on Absorption for TE Polarized Field

1999 ◽  
Vol 607 ◽  
Author(s):  
C. W. Cheah ◽  
G. Karunasiri ◽  
L. S. Tan
Keyword(s):  
Quantum Well ◽  
Absorption Spectra ◽  
Function Approximation ◽  
Theoretical Study ◽  
Material System ◽  
Intersubband Transition ◽  
Intersubband Transitions ◽  
Quantum Well Infrared Photodetectors ◽  
Material Systems ◽  
Excited Transition

AbstractIn this paper, the theoretical study of intersubband transitions in quantum well infrared photodetectors (QWIPs) applying the eight bands k.p model incorporated with envelope function approximation is described. The focus of the work is on the intersubband transition in n-type IIIV QWIP based on AIGaAs/GaAs and AlGaAs/InGaAs material system, with particular emphasis placed on the physics of TE excited transition and the improvement of resulted absorption. Various theoretical absorption spectra of the two material systems are compared, the distinct mechanisms of the intersubband transition for the two material systems are proposed. Possible ways of improving on the absorption for such excitation are also investigated and discussed.

Investigation of Intersubband Transition in GaAs/AlGaAs Quantum Well Infrared Photodetectors

2007 ◽  
Vol 31 ◽  
pp. 105-107 ◽  
Author(s):  
D.S. Li ◽  
W.J. Fan ◽  
Y.X. Dang ◽  
B.S. Ma ◽  
D.H. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Absorption Peak ◽  
Infrared Photodetectors ◽  
Structure Parameters ◽  
Intersubband Transition ◽  
Intersubband Transitions ◽  
Device Structure ◽  
Transition Energies ◽  
Quantum Well Infrared Photodetectors ◽  
Simulation Results

We report the design, characterization and fabrication of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) to achieve intersubband transitions at expected long wavelengths. With eight-band k·p model, we calculated the E2-E1 transition energies of GaAs/Al0.25Ga0.75As QWs with the different well widths. According to the calculation, we designed a QWIP with the estimated detection wavelength around 9 μm. The actual device structure parameters, such as well width and Al composition, were confirmed by the XRD measurements. The absorption peak at 9.46 μm and the peak responsivity at 8.7 μm are obtained, which are very close to the simulation results.

Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6654-6658 ◽  
Author(s):  
Irina Khmyrova ◽  
Maxim Ryzhii ◽  
Victor Ryzhii ◽  
Robert Suris ◽  
Chihiro Hamaguchi
Keyword(s):  
Quantum Well ◽  
Theoretical Study ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

2017 ◽  
Vol 38 (5) ◽  
pp. 054006 ◽  
Author(s):  
Han Wang ◽  
Shilong Li ◽  
Honglou Zhen ◽  
Xiaofei Nie ◽  
Gaoshan Huang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Strain Effect ◽  
Intersubband Transitions ◽  
Quantum Well Infrared Photodetectors

Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection

1994 ◽  
Vol 299 ◽  
Author(s):  
Sheng S. Li ◽  
Y. H. Wang ◽  
M. Y. Chuang ◽  
P. Ho
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Image Sensor ◽  
Infrared Photodetectors ◽  
Large Area ◽  
Dual Mode ◽  
Sensor Applications ◽  
Quantum Well Infrared Photodetectors ◽  
Material Systems ◽  
Ir Detection

AbstractWe present four new types of III-V quantum well infrared photodetectors (QWIPs) operating in photoconductive (PC) and photovoltaic (PV) modes for the wavelength range from 2 to 14 μm. These dual-mode (DM) operation QWIPs were grown by the MBE technique using GaAs/AlGaAs, AlAs/AlGaAs, and InGaAs/InAlAs material systems. Based on the bound-to-miniband (BTM) and the enhanced bound-to-continuum (BTC) intersubband transition schemes, these detectors provide the features of large absorption coefficient, low dark current, and high detectivity in the wavelength of interest, and show promising for use in large area IR focal plane array image sensor applications.

INTERSUBBAND TRANSITIONS IN DOPED AND UNDOPED QUANTUM WELL STRUCTURES OF In0.53Ga0.47As/In0.52Al0.48As

2001 ◽  
Vol 10 (03) ◽  
pp. 337-344 ◽  
Author(s):  
YUTAKA TAKAHASHI ◽  
TADASHI KAWAZOE ◽  
HITOSHI KAWAGUCHI ◽  
YUICHI KAWAMURA
Keyword(s):  
Quantum Well ◽  
Short Wavelength ◽  
Intersubband Transition ◽  
Intersubband Transitions ◽  
Quantum Well Structures ◽  
Wavelength Limit ◽  
Intersubband Absorption ◽  
Tm Mode

We have successfully observed the intersubband absorption in doped as well as in undoped, unstrained quantum well structures of In0.53Ga0.47As/In0.52Al0.48As . The absorption is well resolved near the short-wavelength limit in this structure. Within the accuracy of our measurements, the intersubband transition is observed only in TM mode polarizations in both doped and undoped structures.

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