Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells

1993 ◽  
Author(s):  
Lorene A. Samoska ◽  
Berinder Brar ◽  
Herbert Kroemer
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Intersubband Transitions ◽  
Quantum Well Infrared Photodetectors

Pseudomorphic p-Ge x Si 1-x /Si quantum-well infrared photodetectors for normal incidence operation between 20K and 77K

1992 ◽  
Author(s):  
Roosevelt People ◽  
J. C. Bean ◽  
Sharon K. Sputz ◽  
Clyde G. Bethea ◽  
Larry J. Peticolas ◽  
...  
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

2017 ◽  
Vol 38 (5) ◽  
pp. 054006 ◽  
Author(s):  
Han Wang ◽  
Shilong Li ◽  
Honglou Zhen ◽  
Xiaofei Nie ◽  
Gaoshan Huang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Strain Effect ◽  
Intersubband Transitions ◽  
Quantum Well Infrared Photodetectors

Near-field coupling effect in normal-incidence absorption of quantum-well infrared photodetectors

1999 ◽  
Vol 85 (2) ◽  
pp. 1237-1239 ◽  
Author(s):  
Y. Y. Fu ◽  
M. Willander ◽  
W. Lu ◽  
W. L. Xu ◽  
Ning Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Coupling Effect ◽  
Near Field ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Field Coupling ◽  
Quantum Well Infrared Photodetectors

Investigation of Intersubband Transition in GaAs/AlGaAs Quantum Well Infrared Photodetectors

2007 ◽  
Vol 31 ◽  
pp. 105-107 ◽  
Author(s):  
D.S. Li ◽  
W.J. Fan ◽  
Y.X. Dang ◽  
B.S. Ma ◽  
D.H. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Absorption Peak ◽  
Infrared Photodetectors ◽  
Structure Parameters ◽  
Intersubband Transition ◽  
Intersubband Transitions ◽  
Device Structure ◽  
Transition Energies ◽  
Quantum Well Infrared Photodetectors ◽  
Simulation Results

We report the design, characterization and fabrication of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) to achieve intersubband transitions at expected long wavelengths. With eight-band k·p model, we calculated the E2-E1 transition energies of GaAs/Al0.25Ga0.75As QWs with the different well widths. According to the calculation, we designed a QWIP with the estimated detection wavelength around 9 μm. The actual device structure parameters, such as well width and Al composition, were confirmed by the XRD measurements. The absorption peak at 9.46 μm and the peak responsivity at 8.7 μm are obtained, which are very close to the simulation results.

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

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