Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

2012 ◽  
Vol 112 (8) ◽  
pp. 084502 ◽  
Author(s):  
Asaf Albo ◽  
Dan Fekete ◽  
Gad Bahir
2017 ◽  
Vol 38 (5) ◽  
pp. 054006 ◽  
Author(s):  
Han Wang ◽  
Shilong Li ◽  
Honglou Zhen ◽  
Xiaofei Nie ◽  
Gaoshan Huang ◽  
...  

2007 ◽  
Vol 31 ◽  
pp. 105-107 ◽  
Author(s):  
D.S. Li ◽  
W.J. Fan ◽  
Y.X. Dang ◽  
B.S. Ma ◽  
D.H. Zhang ◽  
...  

We report the design, characterization and fabrication of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) to achieve intersubband transitions at expected long wavelengths. With eight-band k·p model, we calculated the E2-E1 transition energies of GaAs/Al0.25Ga0.75As QWs with the different well widths. According to the calculation, we designed a QWIP with the estimated detection wavelength around 9 μm. The actual device structure parameters, such as well width and Al composition, were confirmed by the XRD measurements. The absorption peak at 9.46 μm and the peak responsivity at 8.7 μm are obtained, which are very close to the simulation results.


1999 ◽  
Author(s):  
K. K. Choi ◽  
C. J. Chen ◽  
L. P. Rohkinson ◽  
N. C. Das ◽  
M. Jhabvala

2009 ◽  
Vol 95 (9) ◽  
pp. 093502 ◽  
Author(s):  
T. Yamanaka ◽  
B. Movaghar ◽  
S. Tsao ◽  
S. Kuboya ◽  
A. Myzaferi ◽  
...  

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