Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection

1994 ◽  
Vol 299 ◽  
Author(s):  
Sheng S. Li ◽  
Y. H. Wang ◽  
M. Y. Chuang ◽  
P. Ho
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Image Sensor ◽  
Infrared Photodetectors ◽  
Large Area ◽  
Dual Mode ◽  
Sensor Applications ◽  
Quantum Well Infrared Photodetectors ◽  
Material Systems ◽  
Ir Detection

AbstractWe present four new types of III-V quantum well infrared photodetectors (QWIPs) operating in photoconductive (PC) and photovoltaic (PV) modes for the wavelength range from 2 to 14 μm. These dual-mode (DM) operation QWIPs were grown by the MBE technique using GaAs/AlGaAs, AlAs/AlGaAs, and InGaAs/InAlAs material systems. Based on the bound-to-miniband (BTM) and the enhanced bound-to-continuum (BTC) intersubband transition schemes, these detectors provide the features of large absorption coefficient, low dark current, and high detectivity in the wavelength of interest, and show promising for use in large area IR focal plane array image sensor applications.

Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications (invited)

2001 ◽  
Vol 692 ◽  
Author(s):  
Sheng S. Li
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Rapid Development ◽  
Focal Plane Arrays ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Design Flexibility ◽  
Ir Detection ◽  
Long Wavelength Infrared

AbstractQuantum well infrared photodetectors (QWIPs) have been widely investigated for the 3–5 μm mid-wavelength infrared (MWIR) and 8–12 μm long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: λc 14 μm) detection in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, the multi-color QWIP required for advanced IR sensing and imaging applications have also been emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4- color) QWIPs using multi-stack quantum wells with different well width and depth and voltage-tunable triple- coupled quantum well (TCQW) structure for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated. In this paper, the design, fabrication, and characterization of a voltage-tunable 2-stack 3-color QWIP for MW/LW/LW IR detection and a 3-stack 3-color QWIP for detection in the water, ozone, and CO2 atmospheric blocking bands are depicted.

Focal Plane Imaging Arrays Based on GaAs/AlGaAs Quantum Well Infrared Photodetectors

1997 ◽  
pp. 311-318 ◽  
Author(s):  
H. C. Liu ◽  
M. Buchanan ◽  
Jianmeng Li ◽  
Z. R. Wasilewski ◽  
P. H. Wilson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Infrared Photodetectors ◽  
Imaging Arrays ◽  
Quantum Well Infrared Photodetectors

Corrugated Quantum Well Infrared Photodetectors and Arrays

1999 ◽  
Author(s):  
K. K. Choi ◽  
C. J. Chen ◽  
L. P. Rohkinson ◽  
N. C. Das ◽  
M. Jhabvala
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors
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