scholarly journals Microstructure Changes of Ti-Al-C Films Deposited by Filtered Cathodic Vacuum Arc

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xianjuan Pang ◽  
Xiaoqiang Liu ◽  
Bo Jin
Keyword(s):  
Raman Spectroscopy ◽  
Ir Spectroscopy ◽  
Flow Rate ◽  
Film Structure ◽  
Vacuum Arc ◽  
Chemical Bonds ◽  
Hydrogen Atoms ◽  
Filtered Cathodic Vacuum Arc ◽  
Carbon Network ◽  
Deposited Films

Nanocomposite Ti-Al-C films were deposited by filtered cathodic vacuum arc (FCVA) at different CH4flows. The deposited films were characterized in terms of elemental and phase compositions, chemical bonds, and texture as a function of CH4flow rate by XRD, XPS, HRTEM, Raman spectroscopy, and IR spectroscopy. The results show that the TiC grain size decreases from 4.2 to 2.9 nm as the CH4flow rate increases from 30 to 80 sccm. The analysis of XPS, HRTEM, and Raman spectroscopy shows that the microstructure of deposited films turns from a TiC dominant TiC-C film to a carbon network dominant TiAl-doped a-C film structure as the CH4flow increases from 30 sccm to 80 sccm. IR spectroscopy shows that most of the hydrogen atoms in the deposited films are bonded to the sp3-hybridized C atoms. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of CH4flow.

Filtered Cathodic Arc Deposited Diamond-Like Carbon: Electron Spin Resonance (ESR) and Raman Spectroscopy

1999 ◽  
Vol 593 ◽  
Author(s):  
B. Druz ◽  
I. Zaritskiy ◽  
Y. Yevtukhov ◽  
A. Konchits ◽  
M. Valakh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Ion Beam ◽  
Vacuum Arc ◽  
Diamond Like Carbon ◽  
Si Substrates ◽  
Spin Resonance ◽  
Filtered Cathodic Vacuum Arc ◽  
Cathodic Arc ◽  
Deposited Films

ABSTRACTTetrahedral diamond like carbon (ta-C) films were deposited onto Si substrates using Filtered Cathodic Vacuum Arc (FCVA) process. Stress of deposited films was varied in the range 3.5÷8.5 GPa. The ESR (stationary and pulse) and Raman techniques were used to analyze sp2 related defects in the pseudo-gap of undoped, as deposited 20 – 100 nm thick films. The results are compared with data for direct ion beam deposited from CH4 plasma hydrogenated DLHC films and nature of paramagnetic defects in DLC is discussed.

NANOCOMPOSITE nc-TiC/a-C:H FILMS FABRICATED BY DUAL PLASMA TECHNIQUE

2007 ◽  
Vol 14 (05) ◽  
pp. 891-897
Author(s):  
YAOHUI WANG ◽  
XU ZHANG ◽  
YUANZHI XU ◽  
XIANYING WU ◽  
HUIXING ZHANG ◽  
...  
Keyword(s):  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Mechanical Tests ◽  
Vacuum Arc ◽  
X Ray Diffraction ◽  
Coil Current ◽  
X Ray ◽  
Mechanical And Tribological Properties ◽  
Nanocrystalline Graphite ◽  
Filtered Cathodic Vacuum Arc

Nanocomposite nc-TiC / a-C : H films have been deposited via filtered cathodic vacuum arc technique, employing Ti target and C 2 H 2 gas as material precursors. The composition and nanostructure of film, correlated to mechanical and tribological properties of film, are varied by changing C 2 H 2 flow rate and filter coil current. Glancing angle X-ray diffraction has been used to show that salient TiC (111) peak exists in film with grain size of order of 8–10 nm, as a function of filter coil current. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) investigations demonstrate that the nc-TiC / a-C : H films mainly contain nanocrystalline graphite and sp2-bonded carbon, both as a function of C 2 H 2 flow rate. Mechanical tests confirm that the nc-TiC / a-C : H films possess superior hardness of 33.9 GPa and elastic modulus of 237.6 GPa.

Diamond-Like Carbon Thin Films with Extremely High Compressive Stress (>8~12GPa) for Advanced CMOS Strain Engineering

2012 ◽  
Vol 1427 ◽  
Author(s):  
Xiaolong Ma ◽  
Huaxiang Yin ◽  
Zuozhen Fu ◽  
Haiqiang Zhang ◽  
Xu Zhang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Compressive Stress ◽  
Cmos Technology ◽  
Strain Engineering ◽  
Intrinsic Stress ◽  
Vacuum Arc ◽  
Diamond Like Carbon ◽  
Multi Wavelength ◽  
Uv Raman ◽  
Filtered Cathodic Vacuum Arc

ABSTRACTDiamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films’ compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films’ Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films’ sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500℃ in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering.

Nanocrystalline Zirconium Oxide Thin Films Prepared by Filtered Cathodic Vacuum Arc

2005 ◽  
Vol 23 ◽  
pp. 63-66
Author(s):  
Z.W. Zhao ◽  
B.K. Tay ◽  
G.Q. Yu ◽  
S.P. Lau
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Zirconium Oxide ◽  
Compositional Analysis ◽  
Nanocrystalline Structure ◽  
Film Structure ◽  
Vacuum Arc ◽  
Oxide Thin Films ◽  
Working Pressure ◽  
Filtered Cathodic Vacuum Arc

Zirconium oxide thin films were deposited at room temperature by using off-plane filtered cathodic vacuum arc (FCVA). Deposition rate, film structure, compositional analysis and optical properties are studied as a function of working pressure. Deposition rate as high as 53 nm/min could be achieved. As increasing working pressure, the film structure changes from Zr-O solid solution, to monoclinic structure with preferred orientation and finally to randomly oriented nanocrystalline structure. The averaged crystal size increases with working pressure and is less than 15 nm. The ratio of O/Zr increases with working pressure as well as transmittance and good stoichiometric film could be achieved with high transmittance of 91% at high working pressure.

Advances in Amorphous Silicon Integrated Photonics Science and Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
G.P. Halada ◽  
Samrat Chawda ◽  
J. Mawyin ◽  
R.J. Tonucci ◽  
A.H. Mahan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Femtosecond Laser Ablation ◽  
Silicon Powder ◽  
Scientific Basis ◽  
Film Structure ◽  
Integrated Photonics ◽  
The Past ◽  
Silicon Based ◽  
Deposited Films

AbstractOver the past few years we have been developing a scientific basis for amorphous silicon-based integrated photonics technology. Waveguides using hydrogen-implanted, optically-smooth, hot-wire-deposited films have been prepared and demonstrated, and structures were characterized by Raman spectroscopy of the implanted and the non-implanted regions of the waveguide samples. The analysis is consistent with greater disorder in the film structure induced through implantation. More recently, materials prepared by femtosecond laser ablation of silicon powder have been characterized by Raman spectroscopy indicating a structure having both amorphous and crystalline components. As amorphous silicon photonics continues to evolve, the patterning of materials of differing crystallinity may become an issue of interest.

GROWTH AND STRUCTURAL STUDY OF NANOCRYSTALLINE TITANIUM OXIDE AND ZIRCONIUM OXIDE THIN FILMS DEPOSITED AT LOW TEMPERATURES

2005 ◽  
Vol 04 (04) ◽  
pp. 795-801
Author(s):  
B. K. TAY ◽  
Z. W. ZHAO ◽  
S. P. LAU ◽  
J. X. GAO
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Low Temperatures ◽  
Zirconium Oxide ◽  
Amorphous Structure ◽  
Film Structure ◽  
Vacuum Arc ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Filtered Cathodic Vacuum Arc

Titanium oxide and zirconium oxide thin films were deposited at low temperatures (not exceeding 350°C) by off-plane filtered cathodic vacuum arc (FCVA). The film structures were studied by XRD and Raman spectra. For titanium oxide thin films, amorphous structure remains up to 230°C, and anatase film with the crystallite size of 16 nm is observed at 330°C as confirmed by XRD and Raman analysis. For zirconium oxide, the film structure develops from amorphous at room temperature to polycrystalline state at 150°C and above. Moreover, for the crystallized films, preferred orientation is along [-111] direction. At 150°C the films possess nano-sized crystallites (less than 15 nm). For these two kinds of metal oxide thin films, surface roughness both increases with the growth temperature.

EFFECT OF THE C2H2 AND N2 FLOW RATE ON NANOCOMPOSITE nc-ZrCN/a-C:H(N) FILM SYNTHESIZED BY FILTERED CATHODIC VACUUM ARC TECHNIQUE

2008 ◽  
Vol 15 (06) ◽  
pp. 781-786 ◽  
Author(s):  
KUI ZHOU ◽  
XIANYING WU ◽  
XU ZHANG ◽  
LIZHAO QIN ◽  
BIN LIAO
Keyword(s):  
Internal Stress ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Vacuum Arc ◽  
X Ray Diffraction ◽  
Xps Spectra ◽  
Xrd Pattern ◽  
X Ray ◽  
Filtered Cathodic Vacuum Arc ◽  
N2 Flow Rate

Nanocomposite nc - ZrCN / a - C : H(N) films were prepared by filtered cathodic vacuum arc technique using the C 2 H 2 and N 2 gas as the precursor. The effect of the C 2 H 2 and N 2 flow rate on the microstructure, internal stress, phase composition, and mechanical properties of nanocomposite nc - ZrCN / a - C : H(N) films has been investigated by glancing incidence X-ray diffraction (GIXRD), surface profiler, and X-ray photoelectron spectroscopy(XPS). It was revealed that the C 2 H 2 and N 2 flow rate affected the structure, Zr content, and internal stress of the films significantly. Furthermore, XRD pattern indicated the presence of the ZrCN crystalline grains in the range of 3–10 nm, and the deconvolution results for XPS spectra showed that the film mainly was constituted by Zr – C , C = C (sp2) and C – C (sp3) bonds.

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