Optical Properties of Nanocrystalline Silicon Films with Different Deposition Temperatures

1999 ◽  
Vol 581 ◽  
Author(s):  
A. M. Ali ◽  
T. Inokuma ◽  
Y. Kurata ◽  
S. Hasegawa
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Absorption Bands ◽  
Si Substrates ◽  
Fused Quartz ◽  
Si Films ◽  
Infrared Absorption Bands

AbsrtactNanocrystalline silicon (nc-Si) films were deposited on fused quartz and single (100) crystal Si substrates by plasma-enhanced chemical vapor deposition from a SiH4-H2 mixture at various deposition temperatures, Tδ. The effects of plasma-assisted hydrogenation at 300°C on the optical and structural properties were examined for the nc-Si films. The film deposited at Tδ = 730°C exhibits photoluminescence (PL) in its as-deposited state, but the intensity of PL decreases after hydrogenation. We find that a correlation between the PL intensity and infrared absorption bands at around 850 and 1000 cm−1.

Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C

2005 ◽  
Vol 862 ◽  
Author(s):  
Sang-Myeon Han ◽  
Joong-Hyun Park ◽  
Hye-Jin Lee ◽  
Kwang-Sub Shin ◽  
Min-Koo Han
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Process Gas ◽  
Si Films

AbstractNanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

scholarly journals Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Kee-Seok Nam ◽  
Yongsoo Jeong ◽  
Dong-Ho Kim ◽  
Sung-Gyu Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Crystalline Volume Fraction ◽  
Working Pressure ◽  
Scan Speed ◽  
Si Films ◽  
High Working Pressure

The crystalline volume of nanocrystalline silicon (Si) films could be successfully controlled simply by changing the substrate scan speed at the high working pressure of 300 Torr. The Si crystalline volume fraction was increased from 30% to 57% by increasing the scan speed from 8 to 30 mm/s. When the Si film was prepared at a low scan speed (8 mm/s), Si crystals of size 5 nm grew homogeneously through the whole film. The higher scan speed was found to accelerate crystallization, and crystals of size up to 25 nm were deposited in the Si film deposited when the scan speed was 30 mm/s.

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