Effect ofSndoping on the formation of silicon nanocrystal in silicon nitride films

Sn -doped silicon nanocrystals ( Si -NCs) embedded in silicon nitride was synthesized by post-annealing of silicon-rich silicon nitride (SRN) films deposited by co-sputtering. The effects of Sn impurity on the Si crystallization behavior and photoluminescence (PL) in SRN films were investigated. Doping with Sn dopants enhances phase separation in SRN and thus accelerates the crystallization of silicon nanoparticles. It was also found that the existence of Sn decreases crystallization temperature, and could be as low as 800°C. In the Sn -doped samples, the crystalline volume fraction increases monotonically from 16.2% to 78.5% with increasing annealing temperature and the area densities of about ~2.2×1012cm-2can be achieved after annealing at 1100°C. In addition, the intensity of PL of the SRN film could be enhanced by adding Sn impurity.

The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction

We examine the dependence of the crystalline volume fraction on the mean crystallite size for hydrogenated nanocrystalline silicon based photovoltaic solar cells; this work builds upon an earlier study by Schmidt et al. (Mater. Res. Soc. Symp. Proc. 1536 (2013)). For each photovoltaic solar cell considered, the X-ray diffraction and Raman spectra are measured. Through the application of Scherrer’s equation, the X-ray diffraction results are used to determine the corresponding mean crystallite sizes. Through peak decomposition, the Raman results are used to estimate the corresponding crystalline volume fraction. Plotting the crystalline volume fraction as a function of the mean crystallite size, it is found that larger mean crystallite sizes tend to favor reduced crystalline volume fractions. The ability to randomly pack smaller crystallites with a greater packing fraction than their larger counterparts was suggested as a possible explanation for this observation.

Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys were developed for application in Si-based thin-film solar cells. The effects of thegermane concentration(RGeH4)and thehydrogen ratio(RH2)on theμc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H andμc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed inμc-Si1-xGex:H. Moreover, a higherRH2significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected byRH2inμc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasingRGeH4, the accompanied increase in Ge content ofμc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization ofRH2andRGeH4, the single-junctionμc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared toμc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

Study of μс-Si:H Thin Films Prepared by RF-PECVD

μc-Si:H thin films have been deposited on the 7059 glass substrate by RF-PECVD. Effects of film thickness on structure and properties of Si thin films were investigated by XRDRamanUV-Vis and precision multimeter. Experimental results indicated that uniform dense microcrystalline silicon thin films can be prepared by rf-PECVD, silicon thin films transferred from a-Si:H to μc-Si:H along with film thickness increased. For μc-Si:H, XRD spectrum occurred (111)(220) and (331) peak, grain size and crystalline volume fraction increased with thickness enhanced, arrived at 82%; optical band gap of μc-Si:H is 2.0~2.36eV and decreased when thickness increased, the transmittance was added firstly and then reduced with film thickness increased, the transmittance curve occurred redshift;the photosensitivity of the thin films was improved firstly and then decreased with thickness increased, which was highest at 104 quantity in the transition zone from a-Si:H to μc-Si:H.

Effect of RF or VHF Plasma on Nanocrystalline Silicon Thin Film Structure: Insight from OES and Langmuir Probe Measurements

ABSTRACTOptical emission spectroscopy (OES) and Langmuir Probe were used to characterize RF and VHF plasma properties under conditions leading to nanocrystalline silicon film deposition. Films deposited by RF plasma at low pressure (3 Torr), even with high crystalline volume fraction, show weak X-ray diffraction signals, suggesting small grain size, while RF films at higher pressure (8 Torr) and VHF films at both high and low pressure have larger grain sizes. The preferential growth orientation is controlled by the H2/SiH4 ratio with RF plasma, while the film deposited by VHF shows primarily (220) orientation independent of H-dilution ratio. Langmuir Probe measurements indicate that the high energy electron population is reduced by increasing pressure from 3 Torr to 8 Torr in RF plasma. Compared with RF plasma, the VHF plasma shows higher electron density and sheath potential, but lower average electron energy, which may be responsible for the larger grain size and crystal orientation. The growth rate and crystalline volume fraction of the film is correlated with OES intensity ratio of SiH* and Hα/SiH* for both RF and VHF plasmas.

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Under different growth conditions, microcrystalline silicon thin films are deposited successfully on glass substrates by the double-frequency plasma enhanced chemical vapor deposition (PECVD). We report the systematic investigation of the effect of process parameters (hydrogen dilution, substrate temperature, forward power, reaction pressure, et al.) on the growth characteristics of microcrystalline silicon thin films. Raman scattering spectra are used to analyze the crystalline condition of the films and the experimental results. Optimizing the process parameters, the highest crystalline volume fraction of microcrystalline silicon films was achieved. It is found that the crystalline volume fraction of microcrystalline silicon films reaches 72.2% at the reaction pressure of 450 Pa, H2/SiH4 flow ratio of 800sccm/10sccm, power of 400 W and substrate temperature of 350 °C.

The dependence of the crystalline volume fraction on the crystallite size for hydrogenated nanocrystalline silicon based solar cells

ABSTRACTWe have performed an analysis on three hydrogenated nanocrystalline silicon (nc-Si:H) based solar cells. In order to determine the impact that impurities play in shaping the material properties, the XRD and Raman spectra corresponding to all three samples were measured. The XRD results, which displayed a number of crystalline silicon-based peaks, were used in order to approximate the mean crystallite sizes through Scherrer's equation. Through a peak decomposition process, the Raman results were used to estimate the corresponding crystalline volume fraction. It was noted that small crystallite sizes appear to favor larger crystalline volume fractions. This dependence seems to be related to the oxygen impurity concentration level within the intrinsic nc-Si:H layers.