scholarly journals Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Kee-Seok Nam ◽  
Yongsoo Jeong ◽  
Dong-Ho Kim ◽  
Sung-Gyu Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Crystalline Volume Fraction ◽  
Working Pressure ◽  
Scan Speed ◽  
Si Films ◽  
High Working Pressure

The crystalline volume of nanocrystalline silicon (Si) films could be successfully controlled simply by changing the substrate scan speed at the high working pressure of 300 Torr. The Si crystalline volume fraction was increased from 30% to 57% by increasing the scan speed from 8 to 30 mm/s. When the Si film was prepared at a low scan speed (8 mm/s), Si crystals of size 5 nm grew homogeneously through the whole film. The higher scan speed was found to accelerate crystallization, and crystals of size up to 25 nm were deposited in the Si film deposited when the scan speed was 30 mm/s.

Effect of Hydrogen Radical on Properties of Hydrogen in Hydrogenated Microcrystalline Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
Takashi Itoh ◽  
Noriyuki Yamana ◽  
Hiroki Inouchi ◽  
Norimitsu Yoshida ◽  
Hidekuni Harada ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Integrated Intensity ◽  
Hydrogen Radical ◽  
Integrated Intensities

ABSTRACTHydrogenated microcrystalline silicon (μc-Si:H) films are prepared by hot-wire assisted plasma enhanced chemical vapor deposition, which controls the hydrogen radical density by filament temperatures, Tf, without changing other conditions. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is studied using infrared absorption and gas effusion spectroscopies. The hydrogen concentration decreases with increasing Tf. The crystalline volume fraction, Xc, increases with Tf and shows a peak at Tf of 1850 °C. Integrated intensities of the modes near 2000 and 2100 cm-1 decrease with increasing Tf. Integrated intensity of the mode near 880 cm-1 shows almost same tendency of Xc. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is discussed.

Optical Properties of Nanocrystalline Silicon Films with Different Deposition Temperatures

1999 ◽  
Vol 581 ◽  
Author(s):  
A. M. Ali ◽  
T. Inokuma ◽  
Y. Kurata ◽  
S. Hasegawa
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Absorption Bands ◽  
Si Substrates ◽  
Fused Quartz ◽  
Si Films ◽  
Infrared Absorption Bands

AbsrtactNanocrystalline silicon (nc-Si) films were deposited on fused quartz and single (100) crystal Si substrates by plasma-enhanced chemical vapor deposition from a SiH4-H2 mixture at various deposition temperatures, Tδ. The effects of plasma-assisted hydrogenation at 300°C on the optical and structural properties were examined for the nc-Si films. The film deposited at Tδ = 730°C exhibits photoluminescence (PL) in its as-deposited state, but the intensity of PL decreases after hydrogenation. We find that a correlation between the PL intensity and infrared absorption bands at around 850 and 1000 cm−1.

Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Kyung-Bae Park ◽  
Ji-Sim Jung ◽  
Jong-Man Kim ◽  
Myung-kwan Ryu ◽  
Sang-Yoon Lee ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon

AbstractMicrocrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4. Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350oC. The deposition rate in films was as high as 10Å/sec. This process produced ¥ìc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.

Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C

2005 ◽  
Vol 862 ◽  
Author(s):  
Sang-Myeon Han ◽  
Joong-Hyun Park ◽  
Hye-Jin Lee ◽  
Kwang-Sub Shin ◽  
Min-Koo Han
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Process Gas ◽  
Si Films

AbstractNanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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