Electron Transport in the III-V Nitride Alloys

1999 ◽  
Vol 572 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. Otleary ◽  
M. S. Shur ◽  
L. F. Eastman
Keyword(s):  
Monte Carlo ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Alloy Composition ◽  
Indium Nitride ◽  
Strong Function ◽  
Velocity Overshoot ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

ABSTRACTWe study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations we determine the velocity-field characteristics associated with these alloys for various alloy compositions. We also determine the dependence of the low-field mobility on the alloy composition. We find that while the low-field mobility is a strong function of the alloy composition, the peak and saturation drift velocities exhibit a more mild dependence. Transient electron transport is also considered. We find that the velocity overshoot characteristic is a strong function of the alloy composition. The device implications of these results are discussed.

Monte Carlo simulation of low-field mobility in strained double gate SOI transistors

2007 ◽  
Vol 7 (3) ◽  
pp. 205-208 ◽  
Author(s):  
F. Gámiz ◽  
A. Godoy ◽  
C. Sampedro ◽  
N. Rodriguez ◽  
F. Ruiz
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Double Gate ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes

2013 ◽  
Vol 79 ◽  
pp. 92-97 ◽  
Author(s):  
J.B. Roldán ◽  
F. Jiménez-Molinos ◽  
M. Balaguer ◽  
F. Gámiz
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Thin Body ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

Velocity Overshoot And Ballistic Electron Transport In Wurtzite Indium Nitride

1997 ◽  
Vol 482 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
U. V. Bhapkar
Keyword(s):  
Drift Velocity ◽  
Field Effect Transistors ◽  
Indium Nitride ◽  
Ballistic Transport ◽  
Velocity Overshoot ◽  
Ensemble Monte Carlo ◽  
Ballistic Electron ◽  
Low Field ◽  
Ballistic Electron Transport ◽  
Low Field Mobility

AbstractUsing an ensemble Monte Carlo approach, ballistic transport and velocity overshoot effects are examined in InN and compared with those in GaN and GaAs. It is found that the peak overshoot velocity is in general greater than both GaN and GaAs. Furthermore, the velocity overshoot in InN occurs over distances in excess of 0.4 μm, which is comparable to GaAs but is significantly longer than the overshoot in GaN. These strong overshoot effects, combined with a high peak drift velocity, large low-field mobility, and large saturation drift velocity, should allow InN based field effect transistors to outperform their GaN and GaAs based counterparts.

scholarly journals Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 163-167 ◽  
Author(s):  
F. M. Bufler ◽  
P. D. Yoder ◽  
W. Fichtner
Keyword(s):  
Electron Transport ◽  
Drain Current ◽  
Channel Length ◽  
Deep Submicron ◽  
Strain Dependence ◽  
Saturation Velocity ◽  
Low Field ◽  
Field Mobility ◽  
Maximum Improvement ◽  
Low Field Mobility

The strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs is investigated by full-band Monte Carlo simulation. On the bulk level, the drift velocity at medium field strengths is still enhanced above Ge-contents of 20% in the substrate, where the low-field mobility is already saturated, while the saturation velocity remains unchanged under strain. In an n-MOSFET with a metallurgical channel length of 50nm, the saturation drain current is enhanced by up to 11%, but this maximum improvement is essentially already achieved at a Ge-content of 20% emphasizing the role of the low-field mobility as a key indicator of device performance in the deep-submicron regime.

scholarly journals Low-field mobility in ultrathin silicon nanowire junctionless transistors

2011 ◽  
Vol 99 (23) ◽  
pp. 233509 ◽  
Author(s):  
Bart Sorée ◽  
Wim Magnus ◽  
William Vandenberghe
Keyword(s):  
Silicon Nanowire ◽  
Low Field ◽  
Field Mobility ◽  
Junctionless Transistors ◽  
Low Field Mobility
Sign in / Sign up

Export Citation Format

Share Document