Low-Field Mobility in Strained Silicon with `Full Band' Monte Carlo Simulation using k.p and EPM Bandstructure

2006 ◽  
Author(s):  
M. Feraille ◽  
D. Rideau ◽  
A. Ghetti ◽  
A. Poncet ◽  
C. Tavernier ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Strained Silicon ◽  
Low Field ◽  
Full Band ◽  
Field Mobility ◽  
Low Field Mobility

Monte Carlo simulation of low-field mobility in strained double gate SOI transistors

2007 ◽  
Vol 7 (3) ◽  
pp. 205-208 ◽  
Author(s):  
F. Gámiz ◽  
A. Godoy ◽  
C. Sampedro ◽  
N. Rodriguez ◽  
F. Ruiz
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Double Gate ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes

2013 ◽  
Vol 79 ◽  
pp. 92-97 ◽  
Author(s):  
J.B. Roldán ◽  
F. Jiménez-Molinos ◽  
M. Balaguer ◽  
F. Gámiz
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Thin Body ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

Electron Transport in the III-V Nitride Alloys

1999 ◽  
Vol 572 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. Otleary ◽  
M. S. Shur ◽  
L. F. Eastman
Keyword(s):  
Monte Carlo ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Alloy Composition ◽  
Indium Nitride ◽  
Strong Function ◽  
Velocity Overshoot ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

ABSTRACTWe study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations we determine the velocity-field characteristics associated with these alloys for various alloy compositions. We also determine the dependence of the low-field mobility on the alloy composition. We find that while the low-field mobility is a strong function of the alloy composition, the peak and saturation drift velocities exhibit a more mild dependence. Transient electron transport is also considered. We find that the velocity overshoot characteristic is a strong function of the alloy composition. The device implications of these results are discussed.

scholarly journals Low-field mobility in ultrathin silicon nanowire junctionless transistors

2011 ◽  
Vol 99 (23) ◽  
pp. 233509 ◽  
Author(s):  
Bart Sorée ◽  
Wim Magnus ◽  
William Vandenberghe
Keyword(s):  
Silicon Nanowire ◽  
Low Field ◽  
Field Mobility ◽  
Junctionless Transistors ◽  
Low Field Mobility
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