scholarly journals Low-field mobility in ultrathin silicon nanowire junctionless transistors

2011 ◽  
Vol 99 (23) ◽  
pp. 233509 ◽  
Author(s):  
Bart Sorée ◽  
Wim Magnus ◽  
William Vandenberghe
Keyword(s):  
Silicon Nanowire ◽  
Low Field ◽  
Field Mobility ◽  
Junctionless Transistors ◽  
Low Field Mobility

Fabrication and Electronic Characteristics of Silicon Nanowire MOSFETs

2008 ◽  
Vol 1080 ◽  
Author(s):  
Hironori Yoshioka ◽  
Yuichiro Nanen ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Room Temperature ◽  
Silicon Nanowire ◽  
Subthreshold Slope ◽  
Low Field ◽  
Field Mobility ◽  
Gate Control ◽  
Bottom Width ◽  
Nanowire Mosfets ◽  
Soi Substrates ◽  
Low Field Mobility

ABSTRACTThe n-type silicon nanowire MOSFETs with a nanowire shape being triangular or trapezoidal, have been fabricated on SOI substrates and characterized. The height and bottom-width of the triangular nanowire has been 10 nm and 19 nm, respectively. The devices have shown good gate control, such as a nearly ideal subthreshold slope of 63 mV/decade, high Ion/Ioff ratio of 107, and small drain-induced barrier lowering of 5 mV/V at room temperature. The low field mobility of triangular nanowire has been estimated to be 130 cm2/V·s and shown no difference with the change of the nanowire shape and direction within the investigated range.

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

2014 ◽  
Vol 29 (4) ◽  
pp. 045024 ◽  
Author(s):  
Min-Kyu Joo ◽  
Mireille Mouis ◽  
Dae-Young Jeon ◽  
Sylvain Barraud ◽  
So Jeong Park ◽  
...  
Keyword(s):  
Low Temperature ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Mobility Analysis ◽  
Low Field ◽  
Field Mobility ◽  
Junctionless Transistors ◽  
Low Field Mobility
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