junctionless transistors Latest Research Papers

Effects of Hafnium Oxide on Short Channel Effects and DC Analysis for Double Gate Junctionless Transistors

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-021-00365-6 ◽

2021 ◽

Author(s):

Hitesh Kumar Phulawariya ◽

Achinta Baidya ◽

Reshmi Maity ◽

Niladri Pratap Maity

Keyword(s):

Hafnium Oxide ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Junctionless Transistors

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Charge Pumping-Based Method for Traps Density Extraction in Junctionless Transistors

10.1109/eurosoi-ulis53016.2021.9560678 ◽

2021 ◽

Author(s):

E. T. Fonte ◽

R. Trevisoli ◽

R. T. Doria

Keyword(s):

Charge Pumping ◽

Junctionless Transistors

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Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective

Silicon ◽

10.1007/s12633-021-01181-6 ◽

2021 ◽

Author(s):

Manish Kumar Rai ◽

Abhinav Gupta ◽

Sanjeev Rai

Keyword(s):

Comparative Analysis ◽

Short Channel ◽

Analysis Study ◽

Leakage Reduction ◽

Reduction Techniques ◽

Junctionless Transistors

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Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac0607 ◽

2021 ◽

Author(s):

Manish Gupta ◽

Vita Pi-Ho Hu

Keyword(s):

Negative Capacitance ◽

Junctionless Transistors

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Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors

AIP Advances ◽

10.1063/5.0035460 ◽

2021 ◽

Vol 11 (5) ◽

pp. 055111

Author(s):

Dae-Young Jeon

Keyword(s):

Threshold Voltage ◽

Channel Geometry ◽

Junctionless Transistors

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Ultra-low power subthreshold logic with Germanium junctionless transistors

Semiconductor Science and Technology ◽

10.1088/1361-6641/abfd16 ◽

2021 ◽

Author(s):

Pradeep Shrivas ◽

Nivedita Jaiswal ◽

Sandeep Semwal ◽

Abhinav Kranti

Keyword(s):

Low Power ◽

Ultra Low Power ◽

Junctionless Transistors ◽

Subthreshold Logic

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Improved Switching Time in Negative Capacitance Junctionless Transistors

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vlsi-tsa51926.2021.9440137 ◽

2021 ◽

Author(s):

Manish Gupta ◽

Vita Pi-Ho Hu

Keyword(s):

Switching Time ◽

Negative Capacitance ◽

Junctionless Transistors

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Channel-hot-carrier degradation in the channel of junctionless transistors: a device- and circuit-level perspective

Journal of Computational Electronics ◽

10.1007/s10825-021-01688-6 ◽

2021 ◽

Author(s):

Meena Panchore ◽

Lokesh Bramhane ◽

Jawar Singh

Keyword(s):

Hot Carrier ◽

Junctionless Transistors ◽

Hot Carrier Degradation

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Study and Analysis of Advanced 3D Multi-Gate Junctionless Transistors

Silicon ◽

10.1007/s12633-020-00904-5 ◽

2021 ◽

Author(s):

Raj Kumar ◽

Shashi Bala ◽

Arvind Kumar

Keyword(s):

Junctionless Transistors

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Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3069936 ◽

2021 ◽

pp. 1-4

Author(s):

Dae-Young Jeon ◽

Mireille Mouis ◽

Sylvain Barraud ◽

Gerard Ghibaudo

Keyword(s):

Channel Length ◽

Junctionless Transistors

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junctionless transistors
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Effects of Hafnium Oxide on Short Channel Effects and DC Analysis for Double Gate Junctionless Transistors

Charge Pumping-Based Method for Traps Density Extraction in Junctionless Transistors

Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective

Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors

Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors

Ultra-low power subthreshold logic with Germanium junctionless transistors

Improved Switching Time in Negative Capacitance Junctionless Transistors

Channel-hot-carrier degradation in the channel of junctionless transistors: a device- and circuit-level perspective

Study and Analysis of Advanced 3D Multi-Gate Junctionless Transistors

Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing

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junctionless transistorsRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Effects of Hafnium Oxide on Short Channel Effects and DC Analysis for Double Gate Junctionless Transistors

Charge Pumping-Based Method for Traps Density Extraction in Junctionless Transistors

Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective

Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors

Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors

Ultra-low power subthreshold logic with Germanium junctionless transistors

Improved Switching Time in Negative Capacitance Junctionless Transistors

Channel-hot-carrier degradation in the channel of junctionless transistors: a device- and circuit-level perspective

Study and Analysis of Advanced 3D Multi-Gate Junctionless Transistors

Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing

junctionless transistors
Recently Published Documents