Nitrogen Profile Engineering for Tunnel Oxynitrides

1999 ◽  
Vol 567 ◽  
Author(s):  
Taro Sugizaki ◽  
Yoko Tada ◽  
Ken-Ichi Hikazutani ◽  
Toshiro Nakanishi ◽  
Kanetake Takasaki
Keyword(s):  
Flash Memory ◽  
Optimum Conditions ◽  
Data Retention ◽  
Flash Memories ◽  
Key Technology ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Retention Characteristics ◽  
Oxide Trap ◽  
Tunnel Oxides

ABSTRACTWe consider nitrogen profiling in oxynitrides to be the key technology for next generation Flash Memories, because of its ability to suppress the generation of traps in tunnel oxides. We are trying to develop an oxynitriding technique for tunnel oxides that uses nitric monooxide. This time, we tried to control nitrogen profile in oxynitrides by using reoxidized oxynitride process. By using a three- step oxidationoxynitridation-reoxidation process, we attempted to systematically tune oxidation conditions, to obtain a satisfactory tunnel oxide/Si interface and SILC characteristics. Highly reliable tunnel oxide for flash memory has been achieved using recently developed reoxidized oxynitrides processing, which is characterized by wet oxidationoxynitridation-dry oxidation. This process yields excellent characteristics, such as low oxide trap formation, low leakage current, and high charge to breakdown (Qbd). This three-step oxynitride process is best suited for flash memories having superior Program/Erase (P/E) cycling endurance and data retention characteristics. In addition, I will propose the optimum conditions for the reoxidation process.

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge

Gate stress effect on low temperature data retention characteristics of split-gate flash memories

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1331-1336 ◽  
Author(s):  
Ling-Chang Hu ◽  
An-Chi Kang ◽  
Eric Chen ◽  
J.R. Shih ◽  
Yao-Feng Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Data ◽  
Stress Effect ◽  
Data Retention ◽  
Flash Memories ◽  
Retention Characteristics

Characteristics of Inter Poly Dielectric (IPD) Prepared by Plasma Oxidation Treatment of LP-CVD SiO2 Film

2008 ◽  
Vol 1108 ◽  
Author(s):  
Jung-hwan Kim ◽  
Yong-Seok Kim ◽  
Byong-Hyun Jang ◽  
Hyun Namkoong ◽  
Woo-Sung Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Oxide Thickness ◽  
Sio2 Film ◽  
Oxide Surface ◽  
Nand Flash ◽  
Plasma Oxidation ◽  
Nand Flash Memory ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Nitride Oxide

AbstractTo improve the IPD reliability of NAND flash memory, plasma oxidation was introduced as the post-treatment process of ONO (Oxide/Nitride/Oxide) IPD. The LP-CVD SiO2 modified by plasma oxidation showed the excellent electrical properties. e.g., low leakage current, high breakdown voltage etc. By the analysis of Tof-SIMS and XRR, we could observe the several changes of physical characteristics such as the reduction of impurities (H, N etc.), the increase of oxide density, and the improvement of oxide surface roughness. We found out the appropriate treatment condition to be able to densify oxide layer without the addition of ONO Equivalent Oxide Thickness (EOT). The LP-CVD SiO2 prepared by plasma oxidation was used for the ONO IPD of 50nm NAND flash device and also compared with the conventional LP-CVD SiO2 in the aspect of the IPD reliability.

Data retention characteristics of sub-100 nm NAND flash memory cells

2003 ◽  
Vol 24 (12) ◽  
pp. 748-750 ◽  
Author(s):  
Jae-Duk Lee ◽  
Jeong-Hyuk Choi ◽  
Donggun Park ◽  
Kinam Kim
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Retention Characteristics

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5charge-trapping layer

2011 ◽  
Vol 26 (10) ◽  
pp. 105015 ◽  
Author(s):  
Zhiwei Zheng ◽  
Zongliang Huo ◽  
Manhong Zhang ◽  
Chenxin Zhu ◽  
Jing Liu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Data Retention ◽  
Retention Characteristics
Sign in / Sign up

Export Citation Format

Share Document