Gate stress effect on low temperature data retention characteristics of split-gate flash memories

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1331-1336 ◽  
Author(s):  
Ling-Chang Hu ◽  
An-Chi Kang ◽  
Eric Chen ◽  
J.R. Shih ◽  
Yao-Feng Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Data ◽  
Stress Effect ◽  
Data Retention ◽  
Flash Memories ◽  
Retention Characteristics

Nitrogen Profile Engineering for Tunnel Oxynitrides

1999 ◽  
Vol 567 ◽  
Author(s):  
Taro Sugizaki ◽  
Yoko Tada ◽  
Ken-Ichi Hikazutani ◽  
Toshiro Nakanishi ◽  
Kanetake Takasaki
Keyword(s):  
Flash Memory ◽  
Optimum Conditions ◽  
Data Retention ◽  
Flash Memories ◽  
Key Technology ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Retention Characteristics ◽  
Oxide Trap ◽  
Tunnel Oxides

ABSTRACTWe consider nitrogen profiling in oxynitrides to be the key technology for next generation Flash Memories, because of its ability to suppress the generation of traps in tunnel oxides. We are trying to develop an oxynitriding technique for tunnel oxides that uses nitric monooxide. This time, we tried to control nitrogen profile in oxynitrides by using reoxidized oxynitride process. By using a three- step oxidationoxynitridation-reoxidation process, we attempted to systematically tune oxidation conditions, to obtain a satisfactory tunnel oxide/Si interface and SILC characteristics. Highly reliable tunnel oxide for flash memory has been achieved using recently developed reoxidized oxynitrides processing, which is characterized by wet oxidationoxynitridation-dry oxidation. This process yields excellent characteristics, such as low oxide trap formation, low leakage current, and high charge to breakdown (Qbd). This three-step oxynitride process is best suited for flash memories having superior Program/Erase (P/E) cycling endurance and data retention characteristics. In addition, I will propose the optimum conditions for the reoxidation process.

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics
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