Improvement in Thermal Stability of Stacked Structures of Aluminum Nitride and Lanthanum Oxide Thin Films on Si Substrate

2007 ◽  
Vol 10 (12) ◽  
pp. G93 ◽  
Author(s):  
Dail Eom ◽  
Sang Yong No ◽  
Heechul Park ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Aluminum Nitride ◽  
Lanthanum Oxide ◽  
Si Substrate ◽  
Oxide Thin Films ◽  
Thermal Stability Of

Thermal Stability of Stack Structures of Aluminum Nitride and Lanthanum Oxide Thin Films

2019 ◽  
Vol 3 (3) ◽  
pp. 121-127 ◽  
Author(s):  
Dail Eom ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Aluminum Nitride ◽  
Lanthanum Oxide ◽  
Oxide Thin Films ◽  
Thermal Stability Of

Thermal Stability of Aluminum Doped Zinc Oxide Thin Films

2011 ◽  
Vol 685 ◽  
pp. 147-151 ◽  
Author(s):  
Jin Hua Huang ◽  
Rui Qin Tan ◽  
Jia Li ◽  
Yu Long Zhang ◽  
Ye Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Electrode Materials ◽  
Thin Film Solar Cells ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide ◽  
Thermal Stability Of

Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

1999 ◽  
Vol 563 ◽  
Author(s):  
Dong Joon Kim ◽  
Ik-Soo Kim ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Tensile Stress ◽  
Ion Implantation ◽  
Molybdenum Nitride ◽  
Si Substrate ◽  
Post Annealing ◽  
Thermal Stability Of

AbstractMolybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

Microstructure and Thermal Stability of Aluminum Nitride Thin Films Deposited at Low Temperature on Silicon

2002 ◽  
Vol 149 (2) ◽  
pp. G128 ◽  
Author(s):  
K. K. Harris ◽  
B. P. Gila ◽  
J. Deroaches ◽  
K. N. Lee ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Thermal Stability Of

Thermal Stability of Hydrogen-Doped Zinc-Oxide Thin-Films

2012 ◽  
Vol 15 (1) ◽  
pp. H14 ◽  
Author(s):  
Chi-Li Yeh ◽  
Shao-Ze Tseng ◽  
Wei-Ting Lin ◽  
Chien-Cheng Kuo ◽  
Sheng-Hui Chen
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Zinc Oxide ◽  
Oxide Thin Films ◽  
Thermal Stability Of
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