Effects of nitrogen ion implantation on the thermal stability of tungsten thin films

1998 ◽  
Vol 16 (2) ◽  
pp. 477-481 ◽  
Author(s):  
Yong Tae Kim ◽  
Chul Soon Kwon ◽  
Dong Joon Kim ◽  
Jong-Wan Park ◽  
Chang Woo Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

scholarly journals Oxidation resistance and thermal stability of a β-solidified γ-TiAl based alloy after nitrogen ion implantation

2020 ◽  
Vol 177 ◽  
pp. 109003
Author(s):  
D.O. Panov ◽  
V.S. Sokolovsky ◽  
N.D. Stepanov ◽  
S.V. Zherebtsov ◽  
P.V. Panin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Implantation ◽  
Oxidation Resistance ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

Silicide Contacts for Sub-0.25 μm Devices

1999 ◽  
Vol 564 ◽  
Author(s):  
L. J. Chen ◽  
S. L. Cheng ◽  
S. M. Chang ◽  
Y. C. Peng ◽  
H. Y. Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Silicon Layer ◽  
Metal Contacts ◽  
Nitrogen Ion Implantation ◽  
Selective Epitaxial Growth ◽  
Nitrogen Ion ◽  
Thermal Stability Of

AbstractLow resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μ m devices. In the present paper, we review recent progress in the investigations of lowresistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer, improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001 )Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

Effect of nitrogen ion implantation on the properties of cadmium telluride thin films

2019 ◽  
Author(s):  
Saloni Goyal ◽  
Suresh Panchal ◽  
Chetna Narula ◽  
R. P. Chauhan
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Cadmium Telluride ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Investigations on nitrogen ion implantation effects in vacuum evaporated CdS thin films using Raman scattering and X-ray diffraction studies

2001 ◽  
Vol 304 (1-4) ◽  
pp. 175-180 ◽  
Author(s):  
K. Senthil ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass ◽  
R. Kesavamoorthy ◽  
G.L.N. Reddy ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Cds Thin Films ◽  
Nitrogen Ion

The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 1661-1667 ◽  
Author(s):  
S Venkatachalam ◽  
D Mangalaraj ◽  
Sa K Narayandass ◽  
R Kesavamoorthy ◽  
P Magudapathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Optical And Electrical Properties ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Znse Thin Films

Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

1999 ◽  
Vol 563 ◽  
Author(s):  
Dong Joon Kim ◽  
Ik-Soo Kim ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Tensile Stress ◽  
Ion Implantation ◽  
Molybdenum Nitride ◽  
Si Substrate ◽  
Post Annealing ◽  
Thermal Stability Of

AbstractMolybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

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