Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

1997 ◽  
Vol 472 ◽  
Author(s):  
Dong Joon Kim ◽  
Soon Pil Jeong ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Nitrogen Concentration ◽  
Amorphous State ◽  
Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

1997 ◽  
Vol 473 ◽  
Author(s):  
Dong Joon Kim ◽  
Soon Pil Jeon ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Nitrogen Concentration ◽  
Amorphous State ◽  
Thermal Stability Of

ABSTRACTAmorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

1999 ◽  
Vol 563 ◽  
Author(s):  
Dong Joon Kim ◽  
Ik-Soo Kim ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Tensile Stress ◽  
Ion Implantation ◽  
Molybdenum Nitride ◽  
Si Substrate ◽  
Post Annealing ◽  
Thermal Stability Of

AbstractMolybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Characteristics of the Electroless-Deposited Cu Film as Interconnect on a TaN Diffusion Barrier

2004 ◽  
Vol 449-452 ◽  
pp. 681-684
Author(s):  
Jung Sik Kim
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Intermediate Compound ◽  
Multilayered Structure ◽  
Good Adhesion ◽  
Post Heat Treatment ◽  
Cu Film ◽  
Cu Thin Film ◽  
Thermal Stability Of

In the present study, thermal properties of the electroless-deposited Cu thin film were investigated. The Cu thin film of good adhesion was successfully deposited on the TaN barrier layer by a electroless deposition method. The multilayered structure of Cu/TaN/Si was prepared by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. In order to investigate the effect of post-heat treatment the specimen was annealed in H2 reduction atmosphere. Crystallization and agglomeration of the electroless-deposited Cu film occurred through annealing at H2 atmosphere and resulted in the decrease of film resistance. Thermal stability of Cu/TaN/Si system was maintained up to the annealing temperature of 600°C in H2 atmosphere above which the intermediate compound of Cu-Si was formed through diffusion into the TaN layer

Thermal Stability of Aluminum Doped Zinc Oxide Thin Films

2011 ◽  
Vol 685 ◽  
pp. 147-151 ◽  
Author(s):  
Jin Hua Huang ◽  
Rui Qin Tan ◽  
Jia Li ◽  
Yu Long Zhang ◽  
Ye Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Electrode Materials ◽  
Thin Film Solar Cells ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide ◽  
Thermal Stability Of

Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

2010 ◽  
Vol 53 (4) ◽  
pp. 1049-1055 ◽  
Author(s):  
QingXiang Wang ◽  
ZhiKang Fan ◽  
ShuHua Liang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

Thermal stability of RuZr alloy thin films as the diffusion barrier in Cu metallization

2014 ◽  
Vol 588 ◽  
pp. 461-464 ◽  
Author(s):  
Y. Meng ◽  
Z.X. Song ◽  
D. Qian ◽  
W.J. Dai ◽  
J.F. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Cu Metallization ◽  
Thermal Stability Of

scholarly journals Comparison of Thermal Stability of Epitaxially Grown (La0.5Sr0.5)CoO3 and (La0.6Sr0.4)MnO3 Thin Films Deposited on Si Substrate

2010 ◽  
Vol 445 ◽  
pp. 160-163
Author(s):  
Shigeki Sawamura ◽  
Naonori Sakamoto ◽  
De Sheng Fu ◽  
Kazuo Shinozaki ◽  
Hisao Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Thermal Stability Of

Thermal stability of bottom electrode thin films (La0.5Sr0.5)CoO3 (LSCO) and (La0.6Sr0.4)MnO3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 cm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mcm). The film does not decompose after thermal processing at 900 °C. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

Sign in / Sign up

Export Citation Format

Share Document