Properties of Si/Cs/O nanocluster thin films with negative electron affinity

1999 ◽  
Vol 558 ◽  
Author(s):  
L. N. Dinh ◽  
W. McLean ◽  
M. A. Schildbach ◽  
M. Balooch
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Electron Affinity ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Negative Electron Affinity ◽  
Air Exposure ◽  
Field Electron ◽  
Emission Microscopy ◽  
Background Gas

ABSTRACTThin films of Si/Cs/O nanoclusters have been synthesized by the technique of supersaturated thermal vaporization of Si and Cs in an oxygen background gas. These films, which were deposited onto conducting or semiconducting substrates, exhibit negative electron affinity (NEA) as evidenced by ultraviolet photoemission spectroscopy (UPS). Photo and field electron emission properties of these nanocluster films were investigated with photo-electron emission microscopy (PEEM), field electron emission microscopy (FEEM), and current-voltage measurements. Flat cathodes covered with thin films of Si/Cs/O nanoclusters exhibited high current outputs and low turn-on fields. The films' NEA is unaffected by air exposure and is stable to high temperature annealing (550 TC). A field emission display unit with a simple diode structure containing a flat cathode coated with a patterned thin film of Si/Cs/O nanoclusters has also been built to demonstrate the potential application of this material in cold cathode electron emitting devices, particularly field emission flat panel displays.

Preparation and Field Emission Characteristics of CNx Nanotubes Thin Film

2005 ◽  
Vol 475-479 ◽  
pp. 3595-3598
Author(s):  
Lan Zhang ◽  
Hui Zhong Ma ◽  
Xue Xiang Li ◽  
Ning Yao ◽  
Bing Lin Zhang
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Electron Emission ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Field Electron Emission ◽  
Emission Characteristics ◽  
Flow Ratio ◽  
X Ray ◽  
Field Electron

Carbon nitride nanotubes (CN-NT) thin films were prepared on Ni-Cr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600～650 °C. The morphology of the films were observed by scanning electron microscopy. The microstructure of the film were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction, and Raman spectroscopy. The characteristics of field emission of CN-NT thin films were measured. Experimental results indicate that the film structure and properties of the field electron emission are related to flow ratio of N2 to CH4. When the flow ratio of N2 to CH4 was 3.3, the obtained film had a better field electron emission characteristics. The turn-on field of the film was 3.7 V/µm . The current density was 413.3 µA/cm2 at an electric field of 8 V/µm.

Field Emission Mechanism of H-Terminated N-Type Diamond NEA Surface

2012 ◽  
Vol 1395 ◽  
Author(s):  
Takatoshi Yamada ◽  
Masataka Hasegawa ◽  
Hisato Yamaguchi ◽  
Yuki Kudo ◽  
Ken Okano ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Photoelectron Spectroscopy ◽  
Ultra Violet ◽  
Field Electron Emission ◽  
Emission Model ◽  
Negative Electron Affinity ◽  
Surface Field ◽  
Internal Barrier ◽  
Field Electron

ABSTRACTField electron emission model of hydrogen-terminated n-type diamond was discussed. Ultra-violet photoelectron spectroscopy characterizations indicated that the electron affinity was -0.7 eV and an internal barrier of about 3.5 eV existed on the surface. Field electron emission properties depended on anode-diamond distances. Schottky barrier lowering model suggested that this internal barrier was lowered by the electric field (5.4x106 V/cm) applied onto the negative electron affinity surface of the H-terminated n-type diamond.

scholarly journals Enhanced Field Electron Emission from Photocurrent Treated Nanostructured Indium Oxide Films

2018 ◽  
Vol 228 ◽  
pp. 04003
Author(s):  
Zhenglin Li ◽  
Fuyuan Si ◽  
Miaomiao Wang ◽  
Weigang He ◽  
Yuwei Zhang
Keyword(s):  
Field Emission ◽  
Indium Oxide ◽  
Electron Emission ◽  
Oxide Films ◽  
Field Electron Emission ◽  
Chemical Vapor Deposition Method ◽  
Treatment Technique ◽  
Field Electron ◽  
Ito Glass ◽  
Indium Oxide Films

Field electron emission currents from nanostructured films always have unsatisfied stability. This paper introduces a photocurrent treatment technique to enhance the filed emission properties, and gives a kind of nanostructured indium oxide film suitable for the technique. The products were prepared on patterned ITO glass substrate by using chemical vapor deposition method. With the increase of reaction time, the morphologies of the films changed from cocoonlike particles to hybrid thin films, and finally flowerlike nanostructures were formed. Photocurrent and field electron emission characteristics of the products have been studied. After photocurrent treatment, the flowerlike indium oxide films show stable field emission current (fluctuation is less than 5%), low field emission threshold (at 7.5 V/m, the current density is 1 mA/cm2) and high enhancement factor of electrical field of 778. The field emission test results validated that the photocurrent treated flowerlike indium oxide films may act as electron emitters and applied in display applications.

Low-Macroscopic-Field Electron Emission from Metal Thin Films

2021 ◽  
Author(s):  
I.S. Bizyaev ◽  
P.G. Gabdullin ◽  
M.A. Chumak ◽  
V.Ye. Babyuk ◽  
S.N. Davydov ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Metal Thin Films ◽  
Field Electron
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