Stability of Field Electron Emission and Vacuum Breakdown. Investigations with Field Emission Microscopy and Auger Electron Spectroscopy

1975 ◽  
Vol 27 (2) ◽  
pp. 403-412 ◽  
Author(s):  
B. Jüttner ◽  
H. Wolff ◽  
B. Altrichter
Keyword(s):  
Auger Electron Spectroscopy ◽  
Field Emission ◽  
Electron Emission ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Field Electron Emission ◽  
Vacuum Breakdown ◽  
Field Electron ◽  
Field Emission Microscopy ◽  
Emission Microscopy

Properties of Si/Cs/O nanocluster thin films with negative electron affinity

1999 ◽  
Vol 558 ◽  
Author(s):  
L. N. Dinh ◽  
W. McLean ◽  
M. A. Schildbach ◽  
M. Balooch
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Electron Affinity ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Negative Electron Affinity ◽  
Air Exposure ◽  
Field Electron ◽  
Emission Microscopy ◽  
Background Gas

ABSTRACTThin films of Si/Cs/O nanoclusters have been synthesized by the technique of supersaturated thermal vaporization of Si and Cs in an oxygen background gas. These films, which were deposited onto conducting or semiconducting substrates, exhibit negative electron affinity (NEA) as evidenced by ultraviolet photoemission spectroscopy (UPS). Photo and field electron emission properties of these nanocluster films were investigated with photo-electron emission microscopy (PEEM), field electron emission microscopy (FEEM), and current-voltage measurements. Flat cathodes covered with thin films of Si/Cs/O nanoclusters exhibited high current outputs and low turn-on fields. The films' NEA is unaffected by air exposure and is stable to high temperature annealing (550 TC). A field emission display unit with a simple diode structure containing a flat cathode coated with a patterned thin film of Si/Cs/O nanoclusters has also been built to demonstrate the potential application of this material in cold cathode electron emitting devices, particularly field emission flat panel displays.

scholarly journals Enhanced Field Electron Emission from Photocurrent Treated Nanostructured Indium Oxide Films

2018 ◽  
Vol 228 ◽  
pp. 04003
Author(s):  
Zhenglin Li ◽  
Fuyuan Si ◽  
Miaomiao Wang ◽  
Weigang He ◽  
Yuwei Zhang
Keyword(s):  
Field Emission ◽  
Indium Oxide ◽  
Electron Emission ◽  
Oxide Films ◽  
Field Electron Emission ◽  
Chemical Vapor Deposition Method ◽  
Treatment Technique ◽  
Field Electron ◽  
Ito Glass ◽  
Indium Oxide Films

Field electron emission currents from nanostructured films always have unsatisfied stability. This paper introduces a photocurrent treatment technique to enhance the filed emission properties, and gives a kind of nanostructured indium oxide film suitable for the technique. The products were prepared on patterned ITO glass substrate by using chemical vapor deposition method. With the increase of reaction time, the morphologies of the films changed from cocoonlike particles to hybrid thin films, and finally flowerlike nanostructures were formed. Photocurrent and field electron emission characteristics of the products have been studied. After photocurrent treatment, the flowerlike indium oxide films show stable field emission current (fluctuation is less than 5%), low field emission threshold (at 7.5 V/m, the current density is 1 mA/cm2) and high enhancement factor of electrical field of 778. The field emission test results validated that the photocurrent treated flowerlike indium oxide films may act as electron emitters and applied in display applications.

Auger Electron Emission Micrography and Microanalysis of Solid Surfaces

1973 ◽  
Vol 17 ◽  
pp. 498-508
Author(s):  
K. Hayakawa ◽  
H. Okano ◽  
S. Kawase ◽  
S. Yamamoto
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Energy ◽  
Electron Emission ◽  
Electron Spectroscopy ◽  
Electron Probe ◽  
Auger Electron ◽  
Solid Surfaces ◽  
Energy Analyzer ◽  
Cylindrical Mirror ◽  
Spectroscopy Studies

AbstractAn electron probe Auger emission microanalyzer has been constructed. The instrument is composed of an electromagnetic focussing primary probe column and a cylindrical mirror electron energy analyzer. By using this instrument, Auger electron spectroscopy studies have been carried out in the modes of both emission microanalysis and emission micrograph. The feasibility o£ this method is investigated through its application to the study of iron surface.

Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects

2016 ◽  
Vol 4 (35) ◽  
pp. 8226-8234 ◽  
Author(s):  
Stefania Carapezzi ◽  
Antonio Castaldini ◽  
Filippo Fabbri ◽  
Francesca Rossi ◽  
Marco Negri ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Large Area ◽  
Sic Nanowires ◽  
Field Electron ◽  
Saturation Region ◽  
Saturation Effects

Photo-enhanced field emission from SiC nanowires showed the presence of a saturation region, which is of interest for nanotechnological applications.

Growth of Large-Scale Praseodymium Hexaborides (PrB6) Nanowires and Enhanced Field-Emission Performance

2020 ◽  
Vol 15 (2) ◽  
pp. 276-283 ◽  
Author(s):  
Junqi Xu ◽  
Yanrui Wang ◽  
Wenjie Wang ◽  
Zijun Xu ◽  
Yonglei Jia ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Large Scale ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
Field Electron Emission ◽  
Threshold Field ◽  
Analytical Instruments ◽  
Field Electron ◽  
Pressure Chemical

Large-scale PrB6 nanowires were fabricated by an effective, catalyst-free, and a simple low-pressure chemical vapor deposition (LPCVD) process. These nanowires, characterized in detail by various analytical instruments, demonstrated the large aspect ratio and high single-crystalline grown along the [001] crystal direction perpendicular to the (001) crystal plane. The field electron emission equipment tests manifest that the asgrown PrB6 products have a low turn-on field (Eto, 2.32 V/μm), a threshold field (Ethr, 4.28 V/μm), a high field enhancement factor (β, 2336), as well as a stable current-density (J) of field-emission. The relationships of the field electron emission parameters, such as J, Eto, and β versus cathode gap (d), have been established when d is increased from 500 μm to 800 μm. The outstanding properties suggest that the PrB6 products may be promising emitters in the cold-field-emission cathode application.

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