High Rate Deposition of Microcrystalline Silicon Using Resonance Plasma Source (HELIX) – Plasma Properties and Deposition Results

1999 ◽  
Vol 557 ◽  
Author(s):  
H. Grtiger ◽  
R. Terasa ◽  
A. Haiduk ◽  
A. Kottwitz
Keyword(s):  
Optical Emission ◽  
Plasma Source ◽  
High Rate ◽  
Plasma Discharges ◽  
Microcrystalline Silicon ◽  
Plasma Properties ◽  
Ion Energy ◽  
Positive Ions ◽  
Silane Concentration ◽  
Resonance Plasma

AbstractMicrocrystalline silicon layers have been deposited by PECVD using a resonance plasma source (Helix) operating at frequencies of 46, 68, 113 and 163 MHz. The plasma discharges in hydrogen and various hydrogen/silane mixtures were investigated by optical emission spectroscopy (OES) and mass spectroscopy (MS). Growth rate, crystalline fraction and hydrogen content of the layers were studied for different gas compositions, excitation frequencies and plasma powers.Plasma monitoring revealed preferably the formation of positive ions. The density of positive hydrogen ions increased steadily 15 times by raising the frequency from 46 MHz to 163 MHz, whereas the ion energy was reduced from 75 eV to 23 eV and the radiation from hydrogen decreased to 50 %. Growth rates up to 1.5 μm/h have been achieved for microcrystalline layers at 230 °C deposition temperature. The content of hydrogen was below 15 at.%. Raman spectroscopy measurements reveal that 20 to 70 % of the silicon was crystalline depending on the silane concentration.

High Rate Deposition of Ta-C:H Using an Electron Cyclotron Wave Resonance Plasma Source

1997 ◽  
Vol 498 ◽  
Author(s):  
N. A. Morrison ◽  
S. Muhl ◽  
S. E. Rodil ◽  
W. I. Milne ◽  
J. Robertson ◽  
...  
Keyword(s):  
Friction Coefficient ◽  
Plasma Source ◽  
Tribological Performance ◽  
Electron Cyclotron ◽  
High Rate ◽  
Ion Energy ◽  
Tetrahedral Amorphous Carbon ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

ABSTRACTA compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 A/mm and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.

High-Rate Deposition of a-Si:H Films in 55 kHz Glow Discharge: Growth Mechanisms and Film Structure

1997 ◽  
Vol 467 ◽  
Author(s):  
B. G. Budaguan ◽  
A. A. Aivazov ◽  
A. YU Sazonov ◽  
A. A. Popov ◽  
A. E. Berdnikov
Keyword(s):  
Optical Emission ◽  
Film Structure ◽  
Half Period ◽  
High Rate ◽  
Growth Mechanisms ◽  
Plasma Parameters ◽  
Ionic Flux ◽  
Force Microscopy ◽  
Positive Ions ◽  
Wide Range

ABSTRACTThe 55 kHz GD technique allowed the high-rate deposition of a-Si:H films (up to 30 A/s) with good electronic properties in spite of inhomogeneous structure. In this work, we investigated the growth mechanisms and the correlation between plasma parameters and film structure. The electrical parameters of discharge, the properties of plasma and of the films were investigated with using of wide range of methods (optical emission spectroscopy, mass-spectrometry, IR-spectroscopy, atomic force microscopy).The films were deposited in an industrial reactor of diode type with both non-grounded electrodes used as substrate holders. The deposition mechanism in this case includes the alternation of growth phases when the negatively charged particles reach the anode (at a moment) during the first half-period of an oscillation of electric field, and the improvement of growing surface under the influence of the bombardment by positive ions during the second half-period. It is shown that the increase of the power increases the ionic flux leading to the increase of the size of structural inhomogeneities. The pressure influences the energy of positive ions, and, therefore, the hydrogen content and its bonding form on the growing surface.

Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Vhf Pecvd

2005 ◽  
Vol 862 ◽  
Author(s):  
A. Gordijn ◽  
J. Francke ◽  
L. Hodakova ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Solar Cells ◽  
High Pressures ◽  
Defect Density ◽  
Plasma Potential ◽  
High Rate ◽  
Growth Surface ◽  
Microcrystalline Silicon ◽  
Ion Energy ◽  
Single Junction ◽  
External Power Source

AbstractMicrocrystalline silicon (μc-Si) based single junction solar cells are deposited by VHF PECVD using a showerhead cathode at high pressures in depletion conditions. At a deposition rate of 4.5 nm/s, a stabilized conversion efficiency of 6.7 % is obtained for a single junction solar cell with a μc-Si i-layer of 1 μm. The i-layer is made near the transition from amorphous to crystalline. In order to control the material properties in the growth direction, the hydrogen dilution of silane in the gas phase is graded following different profiles with a parabolic shape. It is observed that the performance of solar cells deposited at high rate improves under light soaking conditions at 50 °C, which we attribute to post deposition equilibration of a fast deposited transition material.The performance is lower at higher rates due to poorer i-layer quality (higher defect density), which may be attributed to smaller relaxation times for growth precursors at the growth surface and the higher energy ion bombardment at higher plasma power. High process pressures can be used to reduce the ion energy by decreasing the mean free path. We have introduced an additional method to limit the ion energy by controlling the DC self bias voltage using an external power source. In this way the quality of the μc-Si layers and the performance of the solar cells is further improved.

High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

1999 ◽  
Vol 337 (1-2) ◽  
pp. 71-73 ◽  
Author(s):  
N.A. Morrison ◽  
S.E. Rodil ◽  
A.C. Ferrari ◽  
J. Robertson ◽  
W.I. Milne
Keyword(s):  
Plasma Source ◽  
Electron Cyclotron ◽  
High Rate ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

Optical emission spectroscopy study toward high rate growth of microcrystalline silicon

2001 ◽  
Vol 386 (2) ◽  
pp. 256-260 ◽  
Author(s):  
Yusuke Fukuda ◽  
Yoshikazu Sakuma ◽  
Chisato Fukai ◽  
Yukihiro Fujimura ◽  
Kazufumi Azuma ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
High Rate ◽  
Spectroscopy Study ◽  
Microcrystalline Silicon

Mechanism of High Rate a-Si:H Deposition in a VHF Plasma

1993 ◽  
Vol 297 ◽  
Author(s):  
M. Heintze ◽  
R. Zedlitz ◽  
G.H. Bauer
Keyword(s):  
Optical Emission ◽  
Impedance Analysis ◽  
High Energy ◽  
High Rate ◽  
Growth Surface ◽  
Very High Frequency ◽  
Ion Energy ◽  
Glow Discharges ◽  
Radical Generation ◽  
Very High

Very high frequency (VHF) glow discharges are employed for high rate a-Si:H deposition while maintaining good optoelectronic materials properties. A more efficient radical generation, either due to higher electron densities or an enhanced high energy electron tail is generally assumed as the mechanism. We have investigated a VHF a-Si:H deposition plasma between 40 and 250MHz by optical emission spectroscopy (OES), mass spectroscopy (MS), ion energy measurements and electrical impedance analysis. The present study shows that the increase of the deposition rate with frequency is essentially due to an enhanced ion flux to the growth surface.

Improved Crystallinity of Microcrystalline Silicon Films Using Deuterium Dilution

2000 ◽  
Vol 609 ◽  
Author(s):  
Susumu Suzuki ◽  
Michio Kondo ◽  
Akihisa Matsuda
Keyword(s):  
Vapor Deposition ◽  
Optical Emission Spectroscopy ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Crystal Formation ◽  
Microcrystalline Silicon ◽  
Ion Energy ◽  
Deuterium Dilution ◽  
Silicon Growth

ABSTRACTDeuterium dilution instead of hydrogen has been studied in microcrystalline silicon growth using plasma enhanced chemical vapor deposition with monosilane. It was found that the crystallinity for D2 dilution is significantly improved as compared to that for H2 dilution at the same growth rate. Optical emission spectroscopy measurement shows that the electron temperature of SiH4 + D2 plasma is lower than that of SiH4 + H2, indicating that the bombarding ion energy is reduced for D2 dilution. It was also found that the H-D exchange reaction on the surface has a certain threshold number of events and that microcrystalline formation occurs only above the threshold. The role of atomic hydrogen originating from a diluent in crystal formation is discussed.

scholarly journals An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films

2009 ◽  
Vol 58 (2) ◽  
pp. 1344
Author(s):  
Han Xiao-Yan ◽  
Geng Xin-Hua ◽  
Hou Guo-Fu ◽  
Zhang Xiao-Dan ◽  
Li Gui-Jun ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Silicon Films ◽  
High Rate ◽  
Spectroscopy Study ◽  
Microcrystalline Silicon

scholarly journals Analysis on steady plasma process of high-rate microcrystalline silicon by optical emission spectroscopy

2013 ◽  
Vol 62 (16) ◽  
pp. 168103
Author(s):  
Fang Jia ◽  
Li Shuang-Liang ◽  
Xu Sheng-Zhi ◽  
Wei Chang-Chun ◽  
Zhao Ying ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
High Rate ◽  
Plasma Process ◽  
Microcrystalline Silicon
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