High Rate Deposition of Ta-C:H Using an Electron Cyclotron Wave Resonance Plasma Source

1997 ◽  
Vol 498 ◽  
Author(s):  
N. A. Morrison ◽  
S. Muhl ◽  
S. E. Rodil ◽  
W. I. Milne ◽  
J. Robertson ◽  
...  
Keyword(s):  
Friction Coefficient ◽  
Plasma Source ◽  
Tribological Performance ◽  
Electron Cyclotron ◽  
High Rate ◽  
Ion Energy ◽  
Tetrahedral Amorphous Carbon ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

ABSTRACTA compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 A/mm and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.

High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

1999 ◽  
Vol 337 (1-2) ◽  
pp. 71-73 ◽  
Author(s):  
N.A. Morrison ◽  
S.E. Rodil ◽  
A.C. Ferrari ◽  
J. Robertson ◽  
W.I. Milne
Keyword(s):  
Plasma Source ◽  
Electron Cyclotron ◽  
High Rate ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

2000 ◽  
Vol 9 (3-6) ◽  
pp. 524-529 ◽  
Author(s):  
S. Rodil ◽  
N.A. Morrison ◽  
W.I. Milne ◽  
J. Robertson ◽  
V. Stolojan ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

Ion energy dependence of film properties for diamond-like carbon prepared with plasma-assisted deposition

2001 ◽  
Vol 16 (11) ◽  
pp. 3034-3037 ◽  
Author(s):  
Cao Zexian
Keyword(s):  
Carbon Films ◽  
Root Mean Square Roughness ◽  
Film Properties ◽  
Ion Energy ◽  
Atomic Force ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
20 Nm ◽  
Maximum Content ◽  
Resonance Plasma

Hydrogen-free diamondlike carbon films were prepared on Si(100) with electron cyclotron wave-resonance plasma, which serves to sputter the graphite target and to simultaneously bombard the growing surface. Direct penetration of postionized carbon atoms (up to 140 eV) in addition to the momentum transfer from Ar plasma facilities the formation of the Ta–C structure. Surface morphology, mechanical, and optical properties of the deposits were examined with respect to the ion energy. Atomic force microscope images revealed island morphology in deposits with a typical root-mean-square roughness of 20 nm. A maximum content of about 70% for the fourfold-bonded structure was estimated from the Raman profiles, giving rise to a micro hardness of 60 ± 5 GPa.

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

2012 ◽  
Vol 112 (9) ◽  
pp. 093305 ◽  
Author(s):  
Vitezslav Stranak ◽  
Ann-Pierra Herrendorf ◽  
Steffen Drache ◽  
Martin Cada ◽  
Zdenek Hubicka ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Plasma Diagnostics ◽  
Low Pressure ◽  
Electron Cyclotron ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

High Rate Deposition of Microcrystalline Silicon Using Resonance Plasma Source (HELIX) – Plasma Properties and Deposition Results

1999 ◽  
Vol 557 ◽  
Author(s):  
H. Grtiger ◽  
R. Terasa ◽  
A. Haiduk ◽  
A. Kottwitz
Keyword(s):  
Optical Emission ◽  
Plasma Source ◽  
High Rate ◽  
Plasma Discharges ◽  
Microcrystalline Silicon ◽  
Plasma Properties ◽  
Ion Energy ◽  
Positive Ions ◽  
Silane Concentration ◽  
Resonance Plasma

AbstractMicrocrystalline silicon layers have been deposited by PECVD using a resonance plasma source (Helix) operating at frequencies of 46, 68, 113 and 163 MHz. The plasma discharges in hydrogen and various hydrogen/silane mixtures were investigated by optical emission spectroscopy (OES) and mass spectroscopy (MS). Growth rate, crystalline fraction and hydrogen content of the layers were studied for different gas compositions, excitation frequencies and plasma powers.Plasma monitoring revealed preferably the formation of positive ions. The density of positive hydrogen ions increased steadily 15 times by raising the frequency from 46 MHz to 163 MHz, whereas the ion energy was reduced from 75 eV to 23 eV and the radiation from hydrogen decreased to 50 %. Growth rates up to 1.5 μm/h have been achieved for microcrystalline layers at 230 °C deposition temperature. The content of hydrogen was below 15 at.%. Raman spectroscopy measurements reveal that 20 to 70 % of the silicon was crystalline depending on the silane concentration.

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