Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects

1985 ◽  
Vol 54 ◽  
Author(s):  
M. Finetti ◽  
H. Ronkainen ◽  
M. Blomberg ◽  
I. Suni
Keyword(s):  
Kinetic Parameters ◽  
Wafer Level ◽  
Resistance Analysis ◽  
Temperature Ramp ◽  
Si Films

ABSTRACTWe have investigated the electromigration resistance of Al-Si/Ti multilayer interconnects. For comparison Al-Si and Al-Si/Ti/Al-Si films were also prepared. The linewidths ranged between 1.6 and 5, um. A temperature-ramp resistance analysis was applied at direct wafer level, to detect electrically transport of material and derive the electromigration kinetic parameters in test vehicles with different geometries.

Comparison of Electromigration Induced Resistance Changes in Multilayer Al-Si/Ti and Al-Si/Ta Interconnects

1986 ◽  
Vol 71 ◽  
Author(s):  
M. Finetti ◽  
I. Suni ◽  
G. Desanti ◽  
L. Bacci ◽  
C. Caprile
Keyword(s):  
Induced Resistance ◽  
Single Layer ◽  
Multilayer Structures ◽  
Resistance Analysis ◽  
Temperature Ramp

AbstractWe have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.

Electromigration in Al And Al-Alloy Thin-Film Conductors

1983 ◽  
Vol 25 ◽  
Author(s):  
R.W. Pasco ◽  
L.E. Felton ◽  
J.A. Schwarz
Keyword(s):  
Thin Film ◽  
Activation Energies ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Resistance Analysis ◽  
Temperature Ramp ◽  
Cu Thin Film ◽  
Kinetics Of

ABSTRACTTemperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) has been applied to thin-film Al and Al-alloy conductors. Results have yielded activation energies in agreement with literature values. The TRACE technique has been used to determine the effect of H2on the kinetics of electromigration damage (EMD) for both Al and Al-2%Cu thin-film conductors.

In Situ Control of Native Oxide Growth for Semiconductor Processes

1992 ◽  
Vol 259 ◽  
Author(s):  
Mizuho Morita ◽  
Tadahiro Ohmi
Keyword(s):  
Film Formation ◽  
Molecular Layer ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Molecular Flow ◽  
Oxide Growth ◽  
Temperature Ramp ◽  
In Situ Control ◽  
Si Films

ABSTRACTIn situ control methods of native oxide growth on Si surfaces at room temperature and during the temperature ramp-up are proposed for metal/Si contact formation, lowtemperature Si epitaxy, and very-thin thermal oxide film formation, based on analyses of factors dominating the oxide growth. Low-resistance W/Si contacts are formed by N2 gas sealed processing of HF cleaning right before W chemical vapor deposition(CVD). Highquality epitaxial Si films are grown at a low temperature of 550°C using Si2H6 molecular flow pre-showering to suppress the oxide growth caused by water or oxygen in a CVD reactor. Very thin gate oxide films with high insulating performance are realized by the preoxidation step at 300°C to form one-molecular-layer oxide for passivation and by the subsequent temperature ramp-up step in ultraclean Ar gas to prevent oxide growth and an increase of surface microroughness before the thermal oxidation step.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

MICROELECTRONICS APPLICATIONS OF DEPOSITED Si FILMS RECRYSTALLIZED FROM THE MELT

1982 ◽  
Vol 43 (C1) ◽  
pp. C1-353-C1-362
Author(s):  
G. K. Celler ◽  
L. E. Trimble
Keyword(s):  
Si Films
Sign in / Sign up

Export Citation Format

Share Document