Electromigration in Al And Al-Alloy Thin-Film Conductors

1983 ◽  
Vol 25 ◽  
Author(s):  
R.W. Pasco ◽  
L.E. Felton ◽  
J.A. Schwarz
Keyword(s):  
Thin Film ◽  
Activation Energies ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Resistance Analysis ◽  
Temperature Ramp ◽  
Cu Thin Film ◽  
Kinetics Of

ABSTRACTTemperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) has been applied to thin-film Al and Al-alloy conductors. Results have yielded activation energies in agreement with literature values. The TRACE technique has been used to determine the effect of H2on the kinetics of electromigration damage (EMD) for both Al and Al-2%Cu thin-film conductors.

Initial Contact Behavior of Nanograined Ni-25at.%Al Film During Nanoindentation

2004 ◽  
Vol 841 ◽  
Author(s):  
Han. Li ◽  
Alfonso H. W. Ngan
Keyword(s):  
Thin Film ◽  
Repeated Loading ◽  
Initial Contact ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Thin Film Sample ◽  
Film Sample ◽  
Microscopy Imaging ◽  
Contact Stage ◽  
Average Grain Size

ABSTRACTCyclic indentation was performed on standard fused quartz, single crystal Ni3Al (111) and nanocrystalline Ni-25at. %Al alloy thin film with average grain size of a few nanometers. For the thin film sample, it is found the scattering of the effective Young's modulus at small depths goes far beyond the expectation from effects due to surface roughness alone. Three representative deformation mechanisms during initial contact stage were identified to be responsible for the scattering with the assistance of immediate pre and post indentation atomic force microscopy imaging. Furthermore, repeated loading was found to stiffen the thin film sample, but not the bulk ones.

Intermetallic Compound Formation in Ti/Al Alloy Thin Film Couples and Its Role in Electromigration Lifetime

1994 ◽  
Vol 141 (1) ◽  
pp. 302-306 ◽  
Author(s):  
D. Jawarani ◽  
J. P. Stark ◽  
H. Kawasaki ◽  
J. O. Olowolafe ◽  
C. C. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Intermetallic Compound ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Compound Formation ◽  
Intermetallic Compound Formation ◽  
Electromigration Lifetime

Processing and microstructure correlations of aluminum alloys for thin-film metallizations

1990 ◽  
Vol 48 (4) ◽  
pp. 972-973
Author(s):  
M. Park ◽  
S. J. Krause ◽  
S. R. Wilson
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Aluminum Alloys ◽  
Integrated Circuit ◽  
Volume Ratio ◽  
Alloy System ◽  
Metal Corrosion ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Si Content

Aluminum alloys, such as Al-Cu and Al-Cu-Si are the most extensively used metals for interconnects in integrated circuit. The beneficial effect of the Cu addition is to increase the resistance to electromigration and hillock growth. Si is also often added to minimize the erosion in contact windows and enhance the metal corrosion resistance in the wet photoresist development process. Due to the importance of grain boundary transport in electromigration failure, factors such as grain size and grain size distribution, have an important influence on the failure threshold in conjunction with the level of Cu. In addition, the level of Cu and Si has many detrimental effects, such as microcorrosion caused by the galvanic action of Al2Cu precipitates and the occurrence of Si precipitates, which result in points of high resistance. It is not clear what deposition conditions and what quantities of Cu and Si would lead to the optimum properties, in relation to the grain size and the size and distribution of Al2Cu and Si precipitates. Reductions of Cu and Si content can help to decrease the formation of Al2Cu and Si precipitates, but it is believed that these precipitates are readily formed due to the large surface to volume ratio. In the present study, the specific correlations between processing conditions, the amount of Cu and Si additions, and the microstructure of the Al alloy thin film are evaluated for the development of an improved alloy system.

Investigation of the Kinetics of Surface-Limited thin Film Growth of SiGe Alloys by CVD of Si2H6/Ge2 H6 Mixtures

1992 ◽  
Vol 282 ◽  
Author(s):  
J. W. Sharp ◽  
Gyula Eres
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Gas Mixtures ◽  
Thin Film Growth ◽  
Probe Laser ◽  
Desorption Kinetics ◽  
Alloy Thin Film ◽  
Strong Temperature Dependence ◽  
Time Resolved ◽  
Kinetics Of

ABSTRACTThe kinetics of surface-limited thin film growth of SiGe alloys was investigated by time-resolved surface differential reflectometry. The source gas, mixtures of disilane and digermane in ratios from 1:1 to 6:1 in helium carrier gas, was delivered to a heated Si(001) substrate by a fast-acting pulsed molecular jet valve. The adsorption and desorption kinetics were determined from the surface differential reflectance signal obtained using a polarized, high-stability HeNe probe laser. Thin film growth was studied in the temperature range of 400–600°C on Si(001) substrates. Preferential incorporation of digermane into the film produces an alloy composition that depends upon but does not mirror the gas composition. For all gas mixtures, there is a strong temperature dependence of the rate at which the adsorption layer decomposes into film plus by-product. The kinetic data and the alloy compositions provide a basis for deducing some of the characteristics of the reaction sequence that leads to SiGe alloy thin film growth.

Growth kinetics of the θ phase in AlCu thin film bilayers

1978 ◽  
Vol 52 (1) ◽  
pp. 97-101 ◽  
Author(s):  
S.U. Campisano ◽  
E. Costanzo ◽  
F. Scaccianoce ◽  
R. Cristofolini
Keyword(s):  
Thin Film ◽  
Growth Kinetics ◽  
Cu Thin Film ◽  
Kinetics Of

Fe-Si-Al Alloy Thin Film for Single-Pole Head

1988 ◽  
Vol 3 (6) ◽  
pp. 417-418
Author(s):  
N. Hayashi ◽  
S. Yoshimura ◽  
J. Numazawa
Keyword(s):  
Thin Film ◽  
Al Alloy ◽  
Alloy Thin Film

Electromigration and stress-induced voiding in fine Al and Al-alloy thin-film lines

1995 ◽  
Vol 39 (4) ◽  
pp. 465-497 ◽  
Author(s):  
C.-K. Hu ◽  
K. P. Rodbell ◽  
T. D. Sullivan ◽  
K. Y. Lee ◽  
D. P. Bouldin
Keyword(s):  
Thin Film ◽  
Al Alloy ◽  
Alloy Thin Film
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