Si/SiGe and III-V Integrated Circuit Technology for Next Generation High-Speed Systems: Comparisons and Tradeoffs
AbstractThis paper will summarize the technology tradeoffs that are involved in the implementation of high-speed integrated circuit technology for communications applications. The advantages of Si/SiGe and III-V technology with respect to CMOS and Si bipolar technologies are discussed.
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2001 ◽
Vol 11
(01)
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pp. iii-iv
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2017 ◽
Vol 55
(10)
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pp. 143-151
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