Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1998 ◽  
Vol 533 ◽  
Author(s):  
A. C. Mocuta ◽  
D. W. Greve
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Content ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Total Carbon ◽  
Carbon Incorporation ◽  
Total Carbon Content

AbstractThin heteroepitaxial Si1-yCy films have been grown on Si (100) by Ultrahigh Vacuum Chemical Vapor Deposition (UHV/CVD) using silane and methylsilane as silicon and carbon precursors. Carbon incorporation has been studied in the growth temperature range of 550°C to 650°C. The layers have been characterized using high resolution X-ray diffraction and secondary ion mass spectrometry. The total carbon content of the alloys increases linearly with the methylsilane partial pressure and a methylsilane sticking coefficient approximately 2 times higher than that of silane was extracted. Layers with up to 1.34 % substitutional carbon have been obtained at the lowest growth temperature. Fully substitutional carbon can be obtained for levels up to 0.65%. Variations of the growth rate with temperature and carbon content are also discussed.

Growth of Thick Ge Epilayers on Si(100) Substrates Utilizing Two-Step Approach by Ultrahigh Vacuum Chemical Vapor Deposition

2013 ◽  
Vol 860-863 ◽  
pp. 890-893
Author(s):  
Zhi Wen Zhou ◽  
Yue Zhong Zhang ◽  
Xiao Xia Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Compressive Strain ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Threading Dislocation

Ge epilayers on low temperature (LT) Ge buffer layers were grown by ultrahigh vacuum chemical vapor deposition using the two-step approach. Effects of the growth temperature and the thickness of the low temperature Ge buffers were studied. It was demonstrated that it was unable to obtain flat LT Ge buffers just through lowering the growth temperature due to the ultraslow grow rate that 3D islands formation couldnt be prohibited. However, the rough LT Ge surface was smoothed by subsequent growth at elevated temperature if the LT Ge layer was thick enough and the compressive strain was relaxed largely, and the detrimental Si-Ge intermixing was effectively prohibited as well. When using proper growth conditions for the low temperature Ge buffer, thick Ge epilayer with a low threading dislocation density and a smooth surface was obtained.

The Effect Of The Nucleation Layer On The Low Temperature Growth Of Gan Using A Remote Plasma Enhanced – Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)

1997 ◽  
Vol 482 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Dong-Jun Kim ◽  
Jong-Sik Paek ◽  
Je-Hee Jo ◽  
Hyo-Gun Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Nucleation Layer ◽  
Temperature Growth ◽  
Low Temperature Growth

AbstractThis study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma cell for a nitrogen source. It was found that the growth temperature and the film thickness of the nucleation layer and the nitrogen flow rate for GaN growth play important roles in the improvement of crystallinity of the GaN layer. The nitridation of sapphire was also found to enhance the formation of facet shaped nuclei on the nucleation layer. As the temperature of the nucleation layer increased, islands with hexagonal and other facet shapes were formed on the grown GaN surface. This facet formation was related with the surface morphology and crystallinity of GaN. The best crystallinity was measured in a GaN layer with hexagonal facets on the surface and such GaN layers could be grown on a nucleation layer grown at 375 °C. Nitridation of sapphire and the growth temperature of the nucleation layer were also found to change the island shapes which enhances the formation of columnar structures in the GaN layer, resulting in the growth of a high crystalline GaN layer at low temperature.

Properties of Si1 − x − y Ge x  C  y Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 146 (12) ◽  
pp. 4611-4618 ◽  
Author(s):  
S. John ◽  
E. J. Quinones ◽  
B. Ferguson ◽  
S. K. Ray ◽  
B. Anantharam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Films

Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

1995 ◽  
Vol 38 (12) ◽  
pp. 2029-2033
Author(s):  
Hsiao-Yi Lin ◽  
Tan Fu Lei ◽  
Horng-Chih Lin ◽  
Chun-Yen Chang ◽  
Ruey-Ching Twu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Polycrystalline Films
Sign in / Sign up

Export Citation Format

Share Document