The role of antiphase domain boundaries in Si epitaxy by ultrahigh vacuum chemical vapor deposition from SiH 4 or SiH 2 Cl 2 on Si(100)-(2×1)

1998 ◽  
Vol 66 (7) ◽  
pp. S1025-S1029 ◽  
Author(s):  
J. Spitzmüller ◽  
M. Fehrenbacher ◽  
F. Haug ◽  
H. Rauscher ◽  
R.J. Behm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Antiphase Domain ◽  
Domain Boundaries ◽  
Si Epitaxy

The Role of Unprecracked Hydride Species Adsorbed on The GaAs(100) in The Growth of GaAs by Ultrahigh Vacuum Chemical Vapor Deposition Using Trimethylgallium and Triethylgallium

1993 ◽  
Vol 334 ◽  
Author(s):  
Seong-Ju Park ◽  
Jeong-Rae Ro ◽  
Jae-Ki Sim ◽  
Jeong Sook Ha ◽  
El-Hang Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Decomposition Temperature ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Impurity ◽  
Surface Decomposition

AbstractsWe have grown GaAs epilayers by ultrahigh vacuum chemical vapor deposition(UHVCVD) using adsorbed hydrides and metalorganic compounds via a surface decomposition process. This result indicates that unprecracked arsine(AsH3) can be used in chemical beam epitaxy(CBE) and that a new hydride source with a low decomposition temperature, monoethylarsine(MEAs) can replace the precracked AsH3 source in CBE. The impurity concentrations in GaAs grown with trimethylgallium(TMG) and triethylgallium(TEG) were found to be very sensitve to growth temperature. It was also found that the uptake of carbon impurity is significantly reduced when TMG is replaced with TEG. The carbon concentrations in epilayers grown using TMG and TEG with unprecracked AsH3 and MEAs were reduced by 2-3 orders of magnitude compared to those by CBE process employing TMG and arsenics from precracked hydrides. We have also found that the hydrogen atoms play an important role in the reduction of carbon content in GaAs epilayer. Intermediates like dihydrides from MEAs decomposed on the surface are considered to supply hydrogen atoms and hydrides during growth, which may remove other carbon containing species.

Properties of Si1 − x − y Ge x  C  y Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 146 (12) ◽  
pp. 4611-4618 ◽  
Author(s):  
S. John ◽  
E. J. Quinones ◽  
B. Ferguson ◽  
S. K. Ray ◽  
B. Anantharam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Films

Role of Hydrogen in Graphene Chemical Vapor Deposition Growth on a Copper Surface

2014 ◽  
Vol 136 (8) ◽  
pp. 3040-3047 ◽  
Author(s):  
Xiuyun Zhang ◽  
Lu Wang ◽  
John Xin ◽  
Boris I. Yakobson ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Surface ◽  
Chemical Vapor Deposition Growth

Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

1995 ◽  
Vol 38 (12) ◽  
pp. 2029-2033
Author(s):  
Hsiao-Yi Lin ◽  
Tan Fu Lei ◽  
Horng-Chih Lin ◽  
Chun-Yen Chang ◽  
Ruey-Ching Twu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Polycrystalline Films

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy

Optimisation of Microcrystaline Silicon Deposited by Expanding Thermal Plasma Chemical Vapor Deposition for Solar-Cell Application

2007 ◽  
Vol 989 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
R.A.C.M.M. van Swaaij ◽  
M.C.M. van de Sanden
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Plasma ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ir Absorption ◽  
Solar Cell Application ◽  
Ion Energy ◽  
Plasma Chemical Vapor Deposition ◽  
Absorption Measurements

AbstractThe causes for the porosity of the microcrystalline material deposited by the expanding thermal plasma (ETP) chemical vapor deposition (CVD) technique have been investigated through IR-absorption measurements. The role of impinging ions on the structure of the material is discussed in relation to the hydrogen bounding configuration (microcrystalline factor). The ion energy is controlled through external RF biasing. Correlation between biasing and reduction of porosity is presented. The influence of high deposition pressure is as well studied, related with changes in a-Si structure.

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