Carbon incorporation in SiGeC alloys grown by ultrahigh vacuum chemical vapor deposition

1999 ◽  
Vol 17 (4) ◽  
pp. 1239-1243 ◽  
Author(s):  
A. C. Mocuta ◽  
D. W. Greve
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Carbon Incorporation

Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1998 ◽  
Vol 533 ◽  
Author(s):  
A. C. Mocuta ◽  
D. W. Greve
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Content ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Total Carbon ◽  
Carbon Incorporation ◽  
Total Carbon Content

AbstractThin heteroepitaxial Si1-yCy films have been grown on Si (100) by Ultrahigh Vacuum Chemical Vapor Deposition (UHV/CVD) using silane and methylsilane as silicon and carbon precursors. Carbon incorporation has been studied in the growth temperature range of 550°C to 650°C. The layers have been characterized using high resolution X-ray diffraction and secondary ion mass spectrometry. The total carbon content of the alloys increases linearly with the methylsilane partial pressure and a methylsilane sticking coefficient approximately 2 times higher than that of silane was extracted. Layers with up to 1.34 % substitutional carbon have been obtained at the lowest growth temperature. Fully substitutional carbon can be obtained for levels up to 0.65%. Variations of the growth rate with temperature and carbon content are also discussed.

Properties of Si1 − x − y Ge x  C  y Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 146 (12) ◽  
pp. 4611-4618 ◽  
Author(s):  
S. John ◽  
E. J. Quinones ◽  
B. Ferguson ◽  
S. K. Ray ◽  
B. Anantharam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Films

Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

1995 ◽  
Vol 38 (12) ◽  
pp. 2029-2033
Author(s):  
Hsiao-Yi Lin ◽  
Tan Fu Lei ◽  
Horng-Chih Lin ◽  
Chun-Yen Chang ◽  
Ruey-Ching Twu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Polycrystalline Films

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy

Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition

1995 ◽  
Vol 67 (8) ◽  
pp. 1092-1094 ◽  
Author(s):  
W. C. Tsai ◽  
C. Y. Chang ◽  
T. G. Jung ◽  
T. S. Liou ◽  
G. W. Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor

Ultrahigh Vacuum Chemical Vapor Deposition (UHVCVD)

2012 ◽  
pp. 2789-2789
Author(s):  
Suhas S. Joshi ◽  
Lesa A. Tran ◽  
Lon J. Wilson ◽  
Suhas S. Joshi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor
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