Modeling of Extended Defects in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J-W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Modeling of Extended Defects in Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J- W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Point and Extended Defect Interactions in Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
M. E. Law ◽  
S. K. Earles
Keyword(s):  
Point Defects ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Defect Interactions ◽  
Short Time ◽  
Surface Sink

ABSTRACTTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the defect behavior during short time, low temperature anneals is a key to explaining TED. The surface can play a defining role in the removal of point defects from the bulk, but there is a lot of controversy over the role and strength of the surface sink for point defects. The controversy will be reviewed, and new experimental results will be presented that investigate the role of the surface on TED.

Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Fundamental Model ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

Moment-based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?

1998 ◽  
Vol 532 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham
Keyword(s):  
Predictive Modeling ◽  
Extended Defects ◽  
Extended Defect ◽  
Experimental Knowledge ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Deactivation

ABSTRACTAccurate modeling of extended defect kinetics is of primary importance for predictive modeling of transient enhanced diffusion (TED). Our previously developed model accurately accounts for extended defects and can be used predictively for TED. Using some experimental knowledge about the distribution of the extended defect population we can simplify our model. We demonstrate that reducing the number of solution variables by one doesn't affect the predictive capabilities of the model for extended defect kinetics and TED. However, some caution has to be used when applying the same principles to modeling of dopant deactivation.

Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Omer Dokumaci ◽  
Paul Ronsheim ◽  
Suri Hegde ◽  
Dureseti Chidambarrao ◽  
Lahir Shaik-Adam ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Diffusion ◽  
High Nitrogen ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
High Boron ◽  
Buried Layer ◽  
Higher Doses ◽  
Low Nitrogen ◽  
Temperature Furnace

AbstractThe effect of nitrogen implants on boron transient enhanced diffusion was studied for nitrogen-only, boron-only, and boron plus nitrogen implants. A boron buried layer was used as a detector for interstitial supersaturation in the samples. Boron dose ranged from 1×1014 to 1×1015 cm−2 and N2+ dose from 5×1013 and 5×1014 cm−2. The energies were chosen such that the location of the nitrogen and boron peaks matched. After the implants, RTA and low temperature furnace anneals were carried out. The diffusivity enhancements were extracted from the buried layer profiles by simulation. Nitrogen-only implants were found to cause significant enhanced diffusion on the buried boron layer. For lower doses, the enhancement of the nitrogen implant is about half as that of boron whereas the enhancements are equal at higher doses. Nitrogen coimplant with boron increases the transient enhanced diffusion of boron at low boron doses, which implies that nitrogen does not act as a strong sink for excess interstitials unlike carbon. At high boron doses, nitrogen co-implant does not significantly change boron diffusion. Sheet resistance measurements indicate that low nitrogen doses do not affect the activation of boron whereas high nitrogen doses either reduce the activation of boron or the mobility of the holes.

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

2003 ◽  
Vol 94 (12) ◽  
pp. 7520 ◽  
Author(s):  
E. Lampin ◽  
F. Cristiano ◽  
Y. Lamrani ◽  
A. Claverie ◽  
B. Colombeau ◽  
...  
Keyword(s):  
Extended Defects ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Dopant segregation to {311} defects during low temperature annealing

1999 ◽  
Vol 568 ◽  
Author(s):  
Kenji Taniguchi ◽  
Tomoya Saito ◽  
Jianxin Xia ◽  
Ryangsu Kim ◽  
Takenori Aoki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
The Self ◽  
Dopant Segregation ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Boron Segregation ◽  
Low Temperature Annealing ◽  
Transient Enhanced Diffusion

ABSTRACTBoron segregation to {311} defects and transient enhanced diffusion (TED) of boron atoms during thermal annealing were investigated in detail using implanted superlattice and Si bulk wafers. We observed that (1)boron atoms segregate to {311} defects during low temperature annealing, (2){311} defects were formed in the area where the self-interstitial concentration exceeds 3×1017cm3, (3)free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.

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