Dopant segregation to {311} defects during low temperature annealing

1999 ◽  
Vol 568 ◽  
Author(s):  
Kenji Taniguchi ◽  
Tomoya Saito ◽  
Jianxin Xia ◽  
Ryangsu Kim ◽  
Takenori Aoki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
The Self ◽  
Dopant Segregation ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Boron Segregation ◽  
Low Temperature Annealing ◽  
Transient Enhanced Diffusion

ABSTRACTBoron segregation to {311} defects and transient enhanced diffusion (TED) of boron atoms during thermal annealing were investigated in detail using implanted superlattice and Si bulk wafers. We observed that (1)boron atoms segregate to {311} defects during low temperature annealing, (2){311} defects were formed in the area where the self-interstitial concentration exceeds 3×1017cm3, (3)free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.

High Performance 0.2 µm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1054-1058 ◽  
Author(s):  
Yukio Nishida ◽  
Hirokazu Sayama ◽  
Satoshi Shimizu ◽  
Takashi Kuroi ◽  
Akihiko Furukawa ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dual Gate

Boron segregation in As-implanted Si due to electric field and transient enhanced diffusion

1997 ◽  
Author(s):  
Ruey-Dar Chang ◽  
P. S. Choi ◽  
Dirk Wristers ◽  
P. K. Chu ◽  
Dim-Lee Kwong
Keyword(s):  
Electric Field ◽  
Enhanced Diffusion ◽  
Boron Segregation ◽  
Transient Enhanced Diffusion

Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Omer Dokumaci ◽  
Paul Ronsheim ◽  
Suri Hegde ◽  
Dureseti Chidambarrao ◽  
Lahir Shaik-Adam ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Diffusion ◽  
High Nitrogen ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
High Boron ◽  
Buried Layer ◽  
Higher Doses ◽  
Low Nitrogen ◽  
Temperature Furnace

AbstractThe effect of nitrogen implants on boron transient enhanced diffusion was studied for nitrogen-only, boron-only, and boron plus nitrogen implants. A boron buried layer was used as a detector for interstitial supersaturation in the samples. Boron dose ranged from 1×1014 to 1×1015 cm−2 and N2+ dose from 5×1013 and 5×1014 cm−2. The energies were chosen such that the location of the nitrogen and boron peaks matched. After the implants, RTA and low temperature furnace anneals were carried out. The diffusivity enhancements were extracted from the buried layer profiles by simulation. Nitrogen-only implants were found to cause significant enhanced diffusion on the buried boron layer. For lower doses, the enhancement of the nitrogen implant is about half as that of boron whereas the enhancements are equal at higher doses. Nitrogen coimplant with boron increases the transient enhanced diffusion of boron at low boron doses, which implies that nitrogen does not act as a strong sink for excess interstitials unlike carbon. At high boron doses, nitrogen co-implant does not significantly change boron diffusion. Sheet resistance measurements indicate that low nitrogen doses do not affect the activation of boron whereas high nitrogen doses either reduce the activation of boron or the mobility of the holes.

Rapid Thermal Annealing in Si

1984 ◽  
Vol 35 ◽  
Author(s):  
T.E. Seidel ◽  
C.S. Pai ◽  
D.J. Lischner ◽  
D.M. Maher ◽  
R.V. Knoell ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Removal Rate ◽  
Round Robin ◽  
Limiting Factor ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

ABSTRACTCertain aspects of Rapid Thermal Annealing (RTA) are reviewed. Temperature considerations are discussed. The implant disorder removal rate is measured (5eV removal energy for As induced damage). Shallower defect-free junctions are obtained using RTA. Results of a ”Round Robin”-RTA annealing are presented, transient enhanced diffusion is not prominent for As. New results for the concentration enhanced diffusion of As are presented. Diffusion from the channeling-tai1 region of shallow boron diffusions is noted as a limiting factor for producing shallow p+-junctions. Other issues are briefly discussed.

Modeling of Extended Defects in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J-W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
L. Pelaz ◽  
G. H. Gilmer ◽  
M. Jaraiz ◽  
H.-J. Gossmann ◽  
C. S. Rafferty ◽  
...  
Keyword(s):  
Atomistic Model ◽  
Interstitial Diffusion ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Early Stages ◽  
Annealing Conditions ◽  
Transient Enhanced Diffusion ◽  
Very High

ABSTRACTAn atomistic model for B implantation, diffusion and clustering is presented. The model embodies the usual mechanism of Si self-interstitial diffusion and B kick-out and also includes the formation of immobile precursors of B clusters prior to the onset of transient enhanced diffusion. These immobile complexes, such as BI2 (a B atom with two Si self-interstitials) form during implantation or in the very early stages of annealing, when the Si interstitial concentration is very high. They then act as nucleation centers for the formation of B-rich clusters during annealing. This model explains and predicts the behavior of B under a wide variety of implantation and annealing conditions.

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