Donor Creation During Oxygen Implanted Buried Oxide Formation

1985 ◽  
Vol 53 ◽  
Author(s):  
M. Delfino ◽  
P.K. Chu
Keyword(s):  
Mass Spectrometry ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Electron Conductivity ◽  
Oxide Formation ◽  
Oxygen Ions ◽  
Buried Oxide ◽  
High Concentrations ◽  
Secondary Ion

ABSTRACTEnhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

Deuterium Diffusion, Trapping and Stability in Buried Silicon Dioxide Layers

1998 ◽  
Vol 513 ◽  
Author(s):  
A. Boutry-Forveille ◽  
A. Nazarov ◽  
D. Ballutaud
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Isothermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Oxide Layers ◽  
Buried Oxide ◽  
Different Temperatures ◽  
Hydrogen Deuterium ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTThe interaction of hydrogen (deuterium used as tracer) with Si-Si02-Si buried oxide layers (BOX) prepared by thermal oxidation or by oxygen implantation (SIMOX) are investigated using Secondary Ion Mass Spectrometry (SIMS) measurements combined with effusion experiments. The sample deuteration is performed at different temperatures between 150 and 300°C using a radiofrequency plasma. In SIMOX samples, the deuterium diffusion profiles analysed by SIMS show deuterium trapping on implantation defects, and deuterium diffusion in the silicon substrate by permeation through the oxide layer for temperatures higher than 250°C. The deuterium is still detected in the buried oxide layers after isothermal annealing at 600°C during 2 hours. The deuterium trapping at the siliconsilicon dioxide interfaces is analysed.

SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers

1995 ◽  
Vol 386 ◽  
Author(s):  
Stephen P. Smith ◽  
Larry Wang ◽  
Jon W. Erickson ◽  
Victor K. F. Chia
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectroscopy ◽  
Metal Contamination ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Industry ◽  
Silicon Wafers ◽  
Analytical Technique ◽  
Surface Metal ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy (SIMS) coupled with oxygen flooding of the silicon surface during analysis provides an analytical technique capable of detecting ≤1010 atoms/cm2 of many surface elemental contaminants. Of particular importance to meet the future needs of the semiconductor industry is the current ability to detect Al and Fe contamination at a level of 2×109 atoms/cm2.

Detecting Real Oxygen Ions in Polycrystalline Diamond Thin Film using Secondary Ion Mass Spectrometry

2007 ◽  
Vol 46 (6A) ◽  
pp. 3391-3393 ◽  
Author(s):  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
Hajime Haneda ◽  
Naoki Ohashi ◽  
Yuichi Ikuhara
Keyword(s):  
Thin Film ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Polycrystalline Diamond ◽  
Oxygen Ions ◽  
Diamond Thin Film ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

SIMS, SAM and RBS Study of High Dose Oxygen Implantation into Silicon

1985 ◽  
Vol 48 ◽  
Author(s):  
W. M. Lau ◽  
P. Ratnam ◽  
C. A. T. Salama
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Analytical Techniques ◽  
High Dose ◽  
Oxygen Distribution ◽  
Oxide Structure ◽  
Buried Oxide ◽  
Auger Microscopy ◽  
Secondary Ion ◽  
High Dose Implantation

ABSTRACTSecondary Ion Mass Spectrometry, Scanning Auger Microscopy, and Rutherford Backscattering Spectroscopy have been used to study a buried oxide structure on silicon formed by high dose implantation. All these surface analytical techniques give useful information about the oxygen distribution in the buried oxide structure. The difficulties in these techniques have also been assessed.

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