SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers

1995 ◽  
Vol 386 ◽  
Author(s):  
Stephen P. Smith ◽  
Larry Wang ◽  
Jon W. Erickson ◽  
Victor K. F. Chia
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectroscopy ◽  
Metal Contamination ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Industry ◽  
Silicon Wafers ◽  
Analytical Technique ◽  
Surface Metal ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy (SIMS) coupled with oxygen flooding of the silicon surface during analysis provides an analytical technique capable of detecting ≤1010 atoms/cm2 of many surface elemental contaminants. Of particular importance to meet the future needs of the semiconductor industry is the current ability to detect Al and Fe contamination at a level of 2×109 atoms/cm2.

Donor Creation During Oxygen Implanted Buried Oxide Formation

1985 ◽  
Vol 53 ◽  
Author(s):  
M. Delfino ◽  
P.K. Chu
Keyword(s):  
Mass Spectrometry ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Electron Conductivity ◽  
Oxide Formation ◽  
Oxygen Ions ◽  
Buried Oxide ◽  
High Concentrations ◽  
Secondary Ion

ABSTRACTEnhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

Accurate Modeling of Residual recoil-mixing during SIMS Measurements

2001 ◽  
Vol 669 ◽  
Author(s):  
Ming Hong Yang ◽  
Robert Odom
Keyword(s):  
Mass Spectrometry ◽  
Mass Transport ◽  
Response Function ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Residual Effect ◽  
Analytical Technique ◽  
Depth Profiles ◽  
Secondary Ion ◽  
Powerful Analytical Technique

ABSTRACTSecondary ion mass spectrometry (SIMS) is an effective and powerful analytical technique, widely used in accurately determining dopant distributions (depth profiles). However, primary ion beam induced mass transport (ion mixing), especially the residual effect during SIMS profile measurements, greatly limits theaccuracy at nanometer depth resolutions by displacing and broadening the measured depth profile. In this paper, we present a simple deconvolution algorithm based on the general characteristics of the experimentally observed SIMS response function to reduce this broadening effect, thereby providing more accurate depth profiles. The results for several specific applications of this approach are presented and its strengths and limitations are discussed.

Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry

MRS Bulletin ◽  
2009 ◽  
Vol 34 (12) ◽  
pp. 907-914 ◽  
Author(s):  
Roger A. De Souza ◽  
Manfred Martin
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Transport Processes ◽  
Fast Diffusion ◽  
Diffusion Kinetics ◽  
Analytical Technique ◽  
Self Diffusion ◽  
Solid State Ionics ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

AbstractSecondary ion mass spectrometry (SIMS) is a powerful analytical technique for determining elemental and isotopic distributions in solids. One of its main attractions to researchers in the field of solid-state ionics is its ability to distinguish between isotopes of the same chemical element as a function of position in a solid. With enriched stable isotopes as diffusion sources, this allows self-diffusion kinetics in solids to be studied. In this article, taking oxygen isotope diffusion in oxides as our main example, we present the standard experimental method, and, subsequently, we discuss several promising developments, in particular the opportunities offered by thin-film geometries, and the investigation of inhomogeneous systems, including possible fast diffusion along grain boundaries and making space-charge layers at interfaces “visible.” These examples demonstrate that SIMS is capable of probing mass transport processes over various length scales, ranging from some nanometers to hundreds of micrometers.

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