Rapid Thermal Annealing of Be Implanted in 0.53Ga 0.47As

1985 ◽  
Vol 52 ◽  
Author(s):  
Christine S. Lam ◽  
Clifton G. Fonstad
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Temperature ◽  
High Dose ◽  
Type Conversion ◽  
Lower Temperature ◽  
Anneal Temperature

ABSTRACTRapid thermal annealing (RTA) techniques have been developed to activate shallow, high dose implants in InGaAs. Activation of deep, multiple energy high dose beryllium implants was also investigated. Two-step RTA cycles which peaked at a high temperature momentarily and then held at a lower temperature for 3 to 10 seconds were used to activate the implanted dopants. Over 80% activation was achieved. The results are superior to furnace anneal results, and at least comparable to graphite strip heater results. Increasing the anneal temperature on higher dose implants, however, type conversion was observed when the peak temperature exceeded a certain value.

Defect States in GaAs after Rapid Thermal Annealing

1985 ◽  
Vol 46 ◽  
Author(s):  
R. A. Street ◽  
N. M. Johnson ◽  
R. D. Burnham
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels ◽  
Luminescence Spectra ◽  
Defect States ◽  
Type Conversion ◽  
Annealing Temperatures ◽  
Luminescence Peak ◽  
Capacitance Voltage ◽  
Anneal Temperature

AbstractElectronic deep levels in GaAs have been investigated by correlated luminescence and DLTS measurements on material in which the defects were systematically perturbed by rapid thermal annealing. The samples were grown by MOCVD and encapsulated with silicon nitride. Annealing was performed at temperatures from 800°C to 950°C for 5 seconds. The luminescence spectra were measured from 0.7 to 1.6 eV at temperatures from 4-80 K and have features at 0.97, 1.17, 1.35, 1.40 and 1.5 eV. The band-to-acceptor luminescence shows the formation of Si acceptors, starting at an anneal temperature of about 850°C. The luminescence peak at 1,35 eV, attributed to As vacancy - acceptor complexes, is observed to increase in intensity with higher annealing temperatures. In contrast, the Ga vacancy-donor complex peak at 1,17 eV decreases in intensity. DLTS data show an increase in the density of deep levels and new levels not present in the unannealed material. Capacitance-voltage data find a reduction in carrier concentration, although type conversion is not observed even after annealing to 950°C.

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

2017 ◽  
Vol 897 ◽  
pp. 411-414 ◽  
Author(s):  
Craig A. Fisher ◽  
Romain Esteve ◽  
Stefan Doering ◽  
Michael Roesner ◽  
Martin de Biasio ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
High Dose ◽  
Stress Determination ◽  
Analysis Techniques ◽  
Physical Study ◽  
Crystal Damage ◽  
Activation Annealing ◽  
Anneal Temperature ◽  
High Dose Implantation

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.

Thermal Donor Removal by Rapid Thermal Annealing: Infrared Absorption

1985 ◽  
Vol 46 ◽  
Author(s):  
Herman J. Stein ◽  
S. K. Hahn ◽  
S. C. Shatas
Keyword(s):  
Excited State ◽  
High Temperature ◽  
Excited States ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Excited State Absorption ◽  
Thermal Donor ◽  
Oxygen Cluster ◽  
Oxygen Precipitates

AbstractRapid thermal annealing of thermal donors in Si with 10 sec anneal times at temperatures between 600 and 1000 °C has been investigated by infrared absorption at 80 K. Thermal donors A through D, which are identified by excited state absorption, are present in as-grown Czochralski Si; whereas excited states for donors A through F as well as photoionization of thermal donors are observed after extended heating at 450 °C. The temperature required for rapid thermal annealing is lower when only donors A through D are present. Removal of thermal donors A through F by rapid thermal annealing at temperatures > 800°C restores 7 to 8 oxygen atoms to interstitial sites per electricallӯ measured donor removed. This ratio supports oxygen cluster models for thermal donors but does not support previous suggestions that such clusters are embryonic forms of high temperature oxygen precipitates.

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