Thermal Donor Removal by Rapid Thermal Annealing: Infrared Absorption

1985 ◽  
Vol 46 ◽  
Author(s):  
Herman J. Stein ◽  
S. K. Hahn ◽  
S. C. Shatas
Keyword(s):  
Excited State ◽  
High Temperature ◽  
Excited States ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Excited State Absorption ◽  
Thermal Donor ◽  
Oxygen Cluster ◽  
Oxygen Precipitates

AbstractRapid thermal annealing of thermal donors in Si with 10 sec anneal times at temperatures between 600 and 1000 °C has been investigated by infrared absorption at 80 K. Thermal donors A through D, which are identified by excited state absorption, are present in as-grown Czochralski Si; whereas excited states for donors A through F as well as photoionization of thermal donors are observed after extended heating at 450 °C. The temperature required for rapid thermal annealing is lower when only donors A through D are present. Removal of thermal donors A through F by rapid thermal annealing at temperatures > 800°C restores 7 to 8 oxygen atoms to interstitial sites per electricallӯ measured donor removed. This ratio supports oxygen cluster models for thermal donors but does not support previous suggestions that such clusters are embryonic forms of high temperature oxygen precipitates.

Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing

2007 ◽  
Vol 131-133 ◽  
pp. 393-398 ◽  
Author(s):  
Xin Zhu ◽  
De Ren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Lei Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Furnace Annealing ◽  
Thermal Donor ◽  
Low Temperature Annealing ◽  
Initial Stage ◽  
Donor Formation ◽  
Oxygen Precipitates ◽  
Ge Doping

The thermal donor formation at 425oC - 450oC in Ge doped Czochralski (GCZ) silicon having about 1016 cm-3 Ge content pretreated by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) has been investigated using low-temperature infrared spectroscopy (LT-IR). The measurements prove that lightly Ge doping can enhance the formation of thermal double donors in the initial stage of the low temperature annealing after RTA process. Ge induced additional grown-in oxygen precipitates during silicon ingot growth and the abundant self-interstitials during RTA may be the reason for the enhancement. However, after extending the annealing time at the low temperatures, the thermal donor concentration in the GCZ silicon is lower than that in the conventional CZ silicon. In final, the mechanism is also discussed.

Effects of extending the π-conjugation of the acetylide ligand on the photophysics and reverse saturable absorption of Pt(ii) bipyridine bisacetylide complexes

2016 ◽  
Vol 18 (41) ◽  
pp. 28674-28687 ◽  
Author(s):  
Taotao Lu ◽  
Chengzhe Wang ◽  
Levi Lystrom ◽  
Chengkui Pei ◽  
Svetlana Kilina ◽  
...  
Keyword(s):  
Excited State ◽  
Excited States ◽  
Substituent Effect ◽  
Excited State Absorption ◽  
Saturable Absorption ◽  
Reverse Saturable Absorption ◽  
Triplet Excited State ◽  
Near Ir ◽  
Terminal Substituent ◽  
Acetylide Ligand

Extending the acetylide ligand π-conjugation diminishes the terminal substituent effect on the lowest excited states, but expands the triplet excited-state absorption to the near-IR region.

Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

2013 ◽  
Vol 114 (4) ◽  
pp. 043520 ◽  
Author(s):  
V. V. Voronkov ◽  
R. Falster ◽  
TaeHyeong Kim ◽  
SoonSung Park ◽  
T. Torack
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Depth Profiles ◽  
Oxygen Precipitates

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Study of GaN thin layers subjected to high-temperature rapid thermal annealing

1998 ◽  
Vol 32 (10) ◽  
pp. 1048-1053 ◽  
Author(s):  
N. I. Katsavets ◽  
G. M. Laws ◽  
I. Harrison ◽  
E. C. Larkins ◽  
T. M. Benson ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Layers ◽  
Temperature Rapid Thermal Annealing
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