Defect States in GaAs after Rapid Thermal Annealing

1985 ◽  
Vol 46 ◽  
Author(s):  
R. A. Street ◽  
N. M. Johnson ◽  
R. D. Burnham
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels ◽  
Luminescence Spectra ◽  
Defect States ◽  
Type Conversion ◽  
Annealing Temperatures ◽  
Luminescence Peak ◽  
Capacitance Voltage ◽  
Anneal Temperature

AbstractElectronic deep levels in GaAs have been investigated by correlated luminescence and DLTS measurements on material in which the defects were systematically perturbed by rapid thermal annealing. The samples were grown by MOCVD and encapsulated with silicon nitride. Annealing was performed at temperatures from 800°C to 950°C for 5 seconds. The luminescence spectra were measured from 0.7 to 1.6 eV at temperatures from 4-80 K and have features at 0.97, 1.17, 1.35, 1.40 and 1.5 eV. The band-to-acceptor luminescence shows the formation of Si acceptors, starting at an anneal temperature of about 850°C. The luminescence peak at 1,35 eV, attributed to As vacancy - acceptor complexes, is observed to increase in intensity with higher annealing temperatures. In contrast, the Ga vacancy-donor complex peak at 1,17 eV decreases in intensity. DLTS data show an increase in the density of deep levels and new levels not present in the unannealed material. Capacitance-voltage data find a reduction in carrier concentration, although type conversion is not observed even after annealing to 950°C.

Rapid Thermal Annealing of Be Implanted in 0.53Ga 0.47As

1985 ◽  
Vol 52 ◽  
Author(s):  
Christine S. Lam ◽  
Clifton G. Fonstad
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Temperature ◽  
High Dose ◽  
Type Conversion ◽  
Lower Temperature ◽  
Anneal Temperature

ABSTRACTRapid thermal annealing (RTA) techniques have been developed to activate shallow, high dose implants in InGaAs. Activation of deep, multiple energy high dose beryllium implants was also investigated. Two-step RTA cycles which peaked at a high temperature momentarily and then held at a lower temperature for 3 to 10 seconds were used to activate the implanted dopants. Over 80% activation was achieved. The results are superior to furnace anneal results, and at least comparable to graphite strip heater results. Increasing the anneal temperature on higher dose implants, however, type conversion was observed when the peak temperature exceeded a certain value.

scholarly journals Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

1997 ◽  
Vol 81 (7) ◽  
pp. 3143-3150 ◽  
Author(s):  
L. Quintanilla ◽  
S. Dueñas ◽  
E. Castán ◽  
R. Pinacho ◽  
J. Barbolla ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

The Effect of Rapid Thermal Annealing on the Electrical and Material Characteristics of Planar Doped and Uniformly Doped GaAs/AiGaAs/InGaAs Pseudomorphic HEMT Structures

1991 ◽  
Vol 240 ◽  
Author(s):  
T. E. Kazior ◽  
S. K. Brierley
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Material Properties ◽  
Structural Changes ◽  
Electrical Characteristics ◽  
Pl Spectra ◽  
Annealing Temperatures ◽  
Si Doping ◽  
Significant Change ◽  
Ingaas Quantum Well

ABSTRACTMBE grown GaAs/Al0.25Ga0.75As/In0.85Ga0.85 As structures were subjected to SiNx capped rapid thermal annealing and their electrical and material properties were characterized by Hall measurements and photoluminescence (PL). Low temperature (5°K) PL spectra from undoped structures annealed up to 900°C indicated negligible intermixing at the AIGaAs/lnGaAs interface. For planar doped structures (Nd≈5×1012/cm2) the Hall mobility began to decrease at anneal temperatures as low as 800°C with significant degradation observed for annealing temperatures at 850°C. This data is supported by PL spectra which indicate no significant change for samples annealed at 800°C. For the samples annealed at ≥ 850°C a large increase in the full width at half maximum of the transitions from the electron sub-bands of the InGaAs quantum well were observed, suggesting that the change in electrical characteristics is primarily due to diffusion of the Si doping pulse. In contrast. Hall measurement of uniformly doped structures reveal only small decreases in mobility and no significant change in sheet concentration for anneal temperatures up to 900°C and doping levels up to 2.5×1018/cm3. PL spectra reveal no structural changes.

Deep levels in undoped bulk InP after rapid thermal annealing

1990 ◽  
Vol 68 (4) ◽  
pp. 1665-1668 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Ju Hoon Yoon ◽  
Suk‐Ki Min ◽  
Young Lae Jung ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Morphology of platinum silicide films prepared by conventional and rapid thermal annealing and deep levels induced in silicon

1991 ◽  
Vol 70 (6) ◽  
pp. 3109-3114 ◽  
Author(s):  
C. A. Dimitriadis ◽  
E. K. Polychroniadis ◽  
E. K. Evangelou ◽  
G. E. Giakoumakis
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels ◽  
Platinum Silicide

Rapid Thermal Annealing of High Energy Si Implants Into GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Ronald N. Legge ◽  
Wayne M. Paulson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Low Dose ◽  
High Energy ◽  
Low Noise ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Lec Gaas

ABSTRACTRapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.

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