Processing of Silicon Oxides Thin Films by Thermal LPCVD Starting from Teos Mixtures

1996 ◽  
Vol 446 ◽  
Author(s):  
Vassilis Em. Vamvakas ◽  
Dimitris Davazoglou ◽  
Constantin Vahlas
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Thermodynamic Simulation ◽  
Chemical Vapor ◽  
Chemical System ◽  
Molar Ratio ◽  
Silicon Oxides ◽  
Molar Ratios ◽  
Carbon Impurities ◽  
Pressure Chemical

AbstractA thermodynamic simulation is presented of the low pressure chemical vapor deposition (LPCVD) of silicon oxide thin films starting from TEOS and N2O mixtures within the temperature range 700 – 1300K, by minimizing the total Gibbs energy of the C‐H‐N‐O‐Si chemical system. It was found that at temperatures up to 1173K and N2O/TEOS molar ratios up to approximately 7, SiO2 films contain carbon impurities, while above this ratio deposits are carbon free. A corresponding experimental investigation is also presented where the obtained submicronic films are slightly substoichiometric in oxygen. They contain small carbon impurities the concentration of which decreases with the N2O/TEOS molar ratio.

Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 98 ◽  
Author(s):  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Silicon Oxides ◽  
Oh Groups ◽  
Plasma Enhanced Cvd ◽  
Cvd Method ◽  
Sioh Group

ABSTRACTWe have deposited a range of silicon oxides by the Remote Plasma Enhanced CVD method. By varying gas mixtures and/or substrate temperature, it is possible to deposit films that are essentially stoichiometric SiO_, Si-deficient oxides which have OH groups but no SiH and Si-rich oxides which have SiH groups and no OH. This paper addresses three issues : (1) the nature of the infrared vibrations associated with the SiH and SiOH groups; (2) the use of D for H substitutions to study the vibrations in (1); and (3) the chemical origin of the SiOH group in the Si-deficient films.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Sol-gel synthesis and characterization of Ag nanoparticles in ZrO2 thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2541-2546 ◽  
Author(s):  
Eisuke Yokoyama ◽  
Hironobu Sakata ◽  
Moriaki Wakaki
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Composite Films ◽  
Dip Coating ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Silver Surface ◽  
Molar Ratios ◽  
Sol Gel Synthesis

ZrO2 thin films containing silver nanoparticles were prepared using the sol-gel method with Ag to Zr molar ratios [Ag]/[Zr] = 0.11, 0.25, 0.43, 0.67, 1.00, 1.50, and 2.33. After dip coating on glass substrate, coated films were annealed at 200 and 300 °C in air. X-ray diffraction peaks corresponding to crystalline Ag were observed, but a specific peak corresponding to ZrO2 was not observed. At the molar ratio [Ag]/[Zr] = 0.25, the particle size of Ag distributed broadly centered at 17 nm for an annealing temperature of 200 °C and at 25 nm for 300 °C. The films annealed in air at 200 °C showed an absorption band centered at 450 nm because of the silver surface plasmon resonance, whereas films heated at 300 °C in air caused a red shift of the absorption to 500 nm. The absorption peak was analyzed using the effective dielectric function of Ag-ZrO2 composite films modeled with the Maxwell-Garnett expression.

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