Au-Cluster Redistribution During Nanosecond Laser-Annealing of Metal/Insulator Matrices

1985 ◽  
Vol 51 ◽  
Author(s):  
W. Pamler ◽  
E. E. Marinero ◽  
M. Chen ◽  
V. B. Jipson

ABSTRACTWe report on the growth and redistribution of Au clusters caused by nanosecond laser interaction of Aux(TeO2 )1−x thin films with intense excimer laser radiation. This laser-induced phenomenon is studied in a time-resolved manner using transient reflectivity and transmissivity techniques. Structural and compositional changes are investigated using Rutherford Backscattering, XPS depth profiling, x-ray diffraction and conductivity measurements. Our studies indicate that melting of the binary structure initializes segregation, growth and coalescence of Au crystallites in the amorphous TeO2 matrix.

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.


1989 ◽  
Vol 66 (8) ◽  
pp. 3523-3525 ◽  
Author(s):  
J. R. Buschert ◽  
J. Z. Tischler ◽  
D. M. Mills ◽  
Q. Zhao ◽  
R. Colella

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Pospieszczyk ◽  
M. Abdel Harith ◽  
B. Stritzker

ABSTRACTSingle crystals of GaAs (100) and Si (110) were laser annealed with a 20 ns ruby laser pulse. Both the velocity distribution and the density variation of evaporated Ga or As and Si atoms were determined by a time-of-flight measurement. In addition time-resolved measurements were made of the reflectivity of the surface during the laser annealing. The data consistently show that the molten phase occurs at energy densities of ≳ 0.35 J cm–2 for GaAs and ≳O.8 J cm for Si.


1986 ◽  
Vol 58 (4) ◽  
pp. 269-272 ◽  
Author(s):  
J.G. Lunney ◽  
P.J. Dobson ◽  
J.D. Hares ◽  
S.D. Tabatabaei ◽  
R.W. Eason

1995 ◽  
Vol 66 (2) ◽  
pp. 1419-1421 ◽  
Author(s):  
S. Kojima ◽  
Y. Kudo ◽  
S. Kawado ◽  
T. Ishikawa ◽  
T. Matsushita

2020 ◽  
Vol 4 (6) ◽  
Author(s):  
A. Mandal ◽  
B. J. Jensen ◽  
M. C. Hudspeth ◽  
S. Root ◽  
R. S. Crum ◽  
...  

2021 ◽  
Vol 103 (6) ◽  
Author(s):  
A. S. J. Méndez ◽  
F. Trybel ◽  
R. J. Husband ◽  
G. Steinle-Neumann ◽  
H.-P. Liermann ◽  
...  

Polymer ◽  
2001 ◽  
Vol 42 (21) ◽  
pp. 8965-8973 ◽  
Author(s):  
Zhi-Gang Wang ◽  
Xuehui Wang ◽  
Benjamin S. Hsiao ◽  
Saša Andjelić ◽  
Dennis Jamiolkowski ◽  
...  

Carbon ◽  
2015 ◽  
Vol 87 ◽  
pp. 246-256 ◽  
Author(s):  
Périne Landois ◽  
Mathieu Pinault ◽  
Stéphan Rouzière ◽  
Dominique Porterat ◽  
Cristian Mocuta ◽  
...  

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