Lattice Temperature of GaAs and Si During Nanosecond Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Pospieszczyk ◽  
M. Abdel Harith ◽  
B. Stritzker
Keyword(s):  
Laser Pulse ◽  
Velocity Distribution ◽  
Single Crystals ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Density Variation ◽  
Nanosecond Laser ◽  
Time Resolved ◽  
Flight Measurement ◽  
Molten Phase

ABSTRACTSingle crystals of GaAs (100) and Si (110) were laser annealed with a 20 ns ruby laser pulse. Both the velocity distribution and the density variation of evaporated Ga or As and Si atoms were determined by a time-of-flight measurement. In addition time-resolved measurements were made of the reflectivity of the surface during the laser annealing. The data consistently show that the molten phase occurs at energy densities of ≳ 0.35 J cm–2 for GaAs and ≳O.8 J cm for Si.

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Au-Cluster Redistribution During Nanosecond Laser-Annealing of Metal/Insulator Matrices

1985 ◽  
Vol 51 ◽  
Author(s):  
W. Pamler ◽  
E. E. Marinero ◽  
M. Chen ◽  
V. B. Jipson
Keyword(s):  
Laser Annealing ◽  
Depth Profiling ◽  
Nanosecond Laser ◽  
Laser Interaction ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
Time Resolved ◽  
Au Clusters ◽  
Excimer Laser Radiation ◽  
Compositional Changes

ABSTRACTWe report on the growth and redistribution of Au clusters caused by nanosecond laser interaction of Aux(TeO2 )1−x thin films with intense excimer laser radiation. This laser-induced phenomenon is studied in a time-resolved manner using transient reflectivity and transmissivity techniques. Structural and compositional changes are investigated using Rutherford Backscattering, XPS depth profiling, x-ray diffraction and conductivity measurements. Our studies indicate that melting of the binary structure initializes segregation, growth and coalescence of Au crystallites in the amorphous TeO2 matrix.

Time-resolved current response of a nanosecond laser pulse illuminated STM tip

1999 ◽  
Vol 68 (6) ◽  
pp. 637-641 ◽  
Author(s):  
J. Jersch ◽  
F. Demming ◽  
I. Fedotov ◽  
K. Dickmann
Keyword(s):  
Laser Pulse ◽  
Nanosecond Laser Pulse ◽  
Nanosecond Laser ◽  
Current Response ◽  
Time Resolved

scholarly journals Time-resolved measurements of the response of a STM tip upon illumination with a nanosecond laser pulse

1998 ◽  
Vol 66 (6) ◽  
pp. 615-619 ◽  
Author(s):  
J. Boneberg ◽  
M. Tresp ◽  
M. Ochmann ◽  
H.-J. Münzer ◽  
P. Leiderer
Keyword(s):  
Laser Pulse ◽  
Nanosecond Laser Pulse ◽  
Nanosecond Laser ◽  
Time Resolved ◽  
Time Resolved Measurements

Electron Energy Distributions During Pulsed Laser Annealing and Damage of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
R. T. Williams ◽  
M. N. Kabler ◽  
J. P. Long ◽  
J. C. Rife ◽  
T. R. Royt
Keyword(s):  
Energy Resolution ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Energy Distributions ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Cylindrical Mirror ◽  
Molten Phase ◽  
532 Nm ◽  
Pulsed Laser Irradiation

ABSTRACTSpectra of photoelectrons and thermionic electrons emitted from silicon during pulsed laser irradiation at energy densities encompassing the thresholds for laser annealing and damage are reported. Annealing is accomplished with a 90-nsec pulse of 532-nm light, which may be accompanied by a 266-nm probe pulse. A cylindrical mirror analyzer is used for energy resolution of emitted electrons. Time-resolved reflectivity at 633 nm verifies attainment of the high-reflectivity annealing phase. Spectral widths and total yields imply a modest electron temperature (T < 3000 K) during annealing. The data suggest that the work function of the silicon (111) face may increase about 0.6 eV upon transition to the molten phase.

Propagation of Shock Wave At the Cavitation Bubble Expansion Stage Induced by a Nanosecond Laser Pulse

2021 ◽  
Author(s):  
Siyuan Geng ◽  
Zhifeng Yao ◽  
Qiang Zhong ◽  
Yuxin Du ◽  
Ruofu Xiao ◽  
...  
Keyword(s):  
Shock Wave ◽  
Laser Pulse ◽  
Wave Front ◽  
Cavitation Bubble ◽  
Bubble Radius ◽  
Front Velocity ◽  
High Time ◽  
Nanosecond Laser ◽  
Time Resolved ◽  
Expansion Stage

Abstract The objective of this paper is to reveal the attenuation characteristics of a shock wave after optical breakdown in water, with laser pulses of 10-ns duration. A high time-resolved shadowgraph method is applied to capture the temporal evolutions of the cavitation bubble wall and shock wave. The experiments are carried out on a single bubble generated far away from the free surface and the rigid walls with laser pulse energies of 22 mJ, 45 mJ and 60 mJ. The results show that a high, time-resolved, wave front velocity of the shock wave is identified, and the maximum velocity can reach up to around 4000 m/s. An asymmetric shock wave is observed at the very start of the bubble expansion stage, and the process of the sharp attenuation of wave front velocity down to sound velocity, is accomplished within 310-ns. The possible relationship of the cavitation bubble and the shock wave is discussed and a prediction model, using the maximum bubble radius and the corresponding time calculated by the Gilmore model, is proposed to calculate the location of the wave front.

Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses

2011 ◽  
Vol 133 (2) ◽  
Author(s):  
Yibo Gao ◽  
Yun Zhou ◽  
Benxin Wu ◽  
Sha Tao ◽  
Ronald L. Jacobsen ◽  
...  
Keyword(s):  
Experimental Study ◽  
Silicon Carbide ◽  
Laser Pulse ◽  
Material Removal ◽  
Laser Pulses ◽  
Nanosecond Laser ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Time Resolved ◽  
Nanosecond Laser Pulses

Silicon carbide, due to its unique properties, has many promising applications in optics, electronics, and other areas. However, it is difficult to micromachine using mechanical approaches due to its brittleness and high hardness. Laser ablation can potentially provide a good solution for silicon carbide micromachining. However, previous studies of silicon carbide ablation by nanosecond laser pulses at infrared wavelengths are very limited on material removal mechanism, and the mechanism has not been well understood. In this paper, experimental study is performed for silicon carbide ablation by 1064 nm and 200 ns laser pulses through both nanosecond time-resolved in situ observation and laser-ablated workpiece characterization. This study shows that the material removal mechanism is surface vaporization, followed by liquid ejection (which becomes clearly observable at around 1 μs after the laser pulse starts). It has been found that the liquid ejection is very unlikely due to phase explosion. This study also shows that the radiation intensity of laser-induced plasma during silicon carbide ablation does not have a uniform spatial distribution, and the distribution also changes very obviously when the laser pulse ends.

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