Time resolved x‐ray diffraction study of laser annealing in silicon at grazing incidence

1989 ◽  
Vol 66 (8) ◽  
pp. 3523-3525 ◽  
Author(s):  
J. R. Buschert ◽  
J. Z. Tischler ◽  
D. M. Mills ◽  
Q. Zhao ◽  
R. Colella
Carbon ◽  
2015 ◽  
Vol 87 ◽  
pp. 246-256 ◽  
Author(s):  
Périne Landois ◽  
Mathieu Pinault ◽  
Stéphan Rouzière ◽  
Dominique Porterat ◽  
Cristian Mocuta ◽  
...  

2013 ◽  
Vol 117 (8) ◽  
pp. 3915-3922 ◽  
Author(s):  
Xianqin Wang ◽  
Jonathan C. Hanson ◽  
Ja Hun Kwak ◽  
Janos Szanyi ◽  
Charles H. F. Peden

2009 ◽  
Vol 21 (18) ◽  
pp. 186002 ◽  
Author(s):  
V Raghavendra Reddy ◽  
Ajay Gupta ◽  
Anil Gome ◽  
Wolfram Leitenberger ◽  
U Pietsch

Science ◽  
1990 ◽  
Vol 249 (4975) ◽  
pp. 1406-1409 ◽  
Author(s):  
J. Wong ◽  
E. M. Larson ◽  
J. B. Holt ◽  
P. A. Waide ◽  
B. Rupp ◽  
...  

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.


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