Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

1983 ◽  
Vol 42 (3) ◽  
pp. 282-284 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. M. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Gradients ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Pulsed Laser Annealing

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Time-resolved X-ray diffraction from silicon during pulsed laser annealing

1986 ◽  
Vol 58 (4) ◽  
pp. 269-272 ◽  
Author(s):  
J.G. Lunney ◽  
P.J. Dobson ◽  
J.D. Hares ◽  
S.D. Tabatabaei ◽  
R.W. Eason
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Pulsed Laser Annealing

Nanosecond resolved X-ray diffraction during pulsed laser annealing of silicon

1983 ◽  
Vol 208 (1-3) ◽  
pp. 511-517 ◽  
Author(s):  
D.M. Mills ◽  
B.C. Larson ◽  
C.W. White ◽  
T.S. Noggle
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing

X-ray studies: CO2 pulsed laser annealing effects on the crystallographic properties, microstructures and crystal defects of vacuum-deposited nanocrystalline ZnSe thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7120-7129 ◽  
Author(s):  
Ahmed Saeed Hassanien ◽  
Alaa A. Akl
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Annealing Effects ◽  
Znse Thin Films

The influence of CO2 pulsed laser annealing on microstructural properties and crystal defects of nanocrystalline ZnSe thin films have been studied. X-ray diffraction was utilized to study these issues. Laser annealing led to enhance the film quality and decrease the crystal defects.

A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
R. F. Wood
Keyword(s):  
Optical Properties ◽  
Pulse Width ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Detailed Examination ◽  
Temperature Gradients ◽  
Probe Laser ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Anti Stokes

ABSTRACTRaman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

1990 ◽  
Vol 34 ◽  
pp. 531-541
Author(s):  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. C. Bowman
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Microelectronic Devices

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser Annealing

1982 ◽  
Vol 48 (5) ◽  
pp. 337-340 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
D. Mills
Keyword(s):  
Diffraction Study ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing

Time-Resolved Study of Silicon During Pulsed-Laser Annealing

1983 ◽  
Vol 13 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. M. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
Temperature Gradients ◽  
Time Resolved ◽  
Synchrotron Source ◽  
Near Surface ◽  
Solid Interface ◽  
Pulsed Laser Annealing

ABSTRACTNear surface temperatures and temperature gradients have been studied in silicon during pulsed laser annealing. The investigation was carried out using nanosecond resolution x-ray diffraction measurements made at the Cornell High Energy Synchrotron Source. Thermal-induced-strain analyses of these real-time, extended Bragg scattering measurements have shown that the lattice temperature reached the melting point during 15 ns, 1.1–1.5 J/cm2 ruby laser pulses and that the temperature of the liquid-solid interface remained at that temperature throughout the high reflectivity phase, after which time the surface temperature subsided rapidly. The temperature gradients below the liquid-solid interface were found to be in the range of 107°C/cm.

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