A new technique for time‐resolved x‐ray diffraction measurements in the single‐bunch operation applied to laser annealing

1995 ◽  
Vol 66 (2) ◽  
pp. 1419-1421 ◽  
Author(s):  
S. Kojima ◽  
Y. Kudo ◽  
S. Kawado ◽  
T. Ishikawa ◽  
T. Matsushita
Keyword(s):  
Laser Annealing ◽  
New Technique ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
A New Technique

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Time resolved x‐ray diffraction study of laser annealing in silicon at grazing incidence

1989 ◽  
Vol 66 (8) ◽  
pp. 3523-3525 ◽  
Author(s):  
J. R. Buschert ◽  
J. Z. Tischler ◽  
D. M. Mills ◽  
Q. Zhao ◽  
R. Colella
Keyword(s):  
Diffraction Study ◽  
Laser Annealing ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray

New Technique for Quantitative SiO2 Determinations of Silicate Materials by X-Ray Diffraction Analysis of Glass

1963 ◽  
Vol 7 ◽  
pp. 209-228 ◽  
Author(s):  
Douglas B. Nash
Keyword(s):  
Diffraction Analysis ◽  
Silicate Glasses ◽  
New Technique ◽  
Inverse Relation ◽  
Diffraction Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Mean ◽  
A New Technique ◽  
Silicate Materials

AbstractResults of an experimental X-ray study on 96 synthetic glasses show that the 2θ positions of glass diffraction maxima have an inverse relation to SiO2 concentration in silicate glasses. This relationship is the basis of a new technique for semiquantitative determinations of SiOa in silicate materials by X-ray diffraction methods. Samples to be examined are fused and the resulting glass scanned from 12 to 40° 2θ using CiiKa radiation. The mean 2θ position of the diffraction maximum is a measure of the SiOs content of the glass. Calibration curves for both weight and molecular percent SiO2 vs. 2θ are presented in this report. The technique requires only small, unweighed amounts of sample for analysis ; it is simple, rapid, and utilizes standard diffraction equipment without modification. Its accuracy, at present, allows SiOa determinations to within ±1 to 4% of the actual concentration.

Hydrogen-assisted reactive evaporation of quasi-stoichiometric polycrystalline InSb films

1992 ◽  
Vol 70 (5) ◽  
pp. 319-321
Author(s):  
G. Leclerc ◽  
J. Beerens ◽  
C. Aktik ◽  
L. Paquin ◽  
M. Isai
Keyword(s):  
New Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Evaporation ◽  
Diffraction Patterns ◽  
A New Technique

We report here a new technique for evaporating polycrystalline InSb films, using hydrogen beams as carriers for each elemental source. The films obtained show X-ray diffraction patterns before annealing that are totally exempt from impurity peaks, unlike those other workers have previously reported for evaporated InSb.

A New Technique of X-Ray Diffraction Microscopy of Scanning Type

1967 ◽  
Vol 6 (12) ◽  
pp. 1393-1396
Author(s):  
Seigô Kishino ◽  
Yoshimitsu Sugita ◽  
Kazutake Kohra
Keyword(s):  
New Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
A New Technique ◽  
Diffraction Microscopy

scholarly journals Combined QEXAFS-XRD, a new technique combiningin situfast scanning X-ray absorption spectroscopy and X-ray diffraction

1993 ◽  
Vol 49 (s1) ◽  
pp. c10-c10
Author(s):  
G. N. Greaves ◽  
A. J. Dent ◽  
B. R. Dobson ◽  
S. M. Clark ◽  
C. A. Ramsdale ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
New Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
A New Technique ◽  
X Ray Absorption

Time-resolved X-ray diffraction from silicon during pulsed laser annealing

1986 ◽  
Vol 58 (4) ◽  
pp. 269-272 ◽  
Author(s):  
J.G. Lunney ◽  
P.J. Dobson ◽  
J.D. Hares ◽  
S.D. Tabatabaei ◽  
R.W. Eason
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Pulsed Laser Annealing
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