Picosecond Ultrasonics Studies of the Effect of Ion Implantation on InterfAcial Bonding Between a thin Film and a Substrate

1997 ◽  
Vol 505 ◽  
Author(s):  
G. Tas ◽  
J. J. Loomis ◽  
H. J. Maris ◽  
A. A. Bailes ◽  
L. E. Seiberling
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Metal Film ◽  
Ion Irradiation ◽  
Interfacial Bonding ◽  
Gold Films ◽  
Acoustic Vibrations ◽  
Helium Ions ◽  
Acoustic Damping ◽  
Picosecond Ultrasonics

ABSTRACTWe have used picosecond ultrasonics to study the effects of ion irradiation on the interfacial bonding between gold films and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The rate at which these vibrations damp out via sound transmission across the interface into the substrate gives a measure of the adhesion of the film to the substrate. The films were irradiated with 2.5 MeV helium ions with doses between 7×1014 and 8×1016 ions cm-2. The adhesion, as measured by the rate of acoustic damping, was found to be significantly improved by the ion irradiation.

Detection of Thin Interfacial Layers by Picosecond Ultrasonics

1992 ◽  
Vol 259 ◽  
Author(s):  
G. Tas ◽  
R. J. Stoner ◽  
H. J. Maris ◽  
G. W. Rubloff ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Light Pulse ◽  
Silicon Substrate ◽  
Metal Film ◽  
Thin Layers ◽  
Acoustic Vibrations ◽  
Interfacial Layers ◽  
Heat Flows ◽  
Picosecond Ultrasonics

ABSTRACTWe report on experiments in which the picosecond ultrasonics technique is used to detect the existence of thin layers of CFx at the interface between a metal film (Al) and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The thickness of the CFx can be estimated from the rate at which these vibrations are damped out via transmission of sound into the silicon substrate through the CFx layer. We show that thin CFx layers can also be detected via their effect on the rate at which heat flows from the metal to the silicon.

Tensile Behavior of Free-Standing Gold Films

1997 ◽  
Vol 472 ◽  
Author(s):  
R.D. Emery ◽  
D.X. Lenshek ◽  
B. Behin ◽  
M. Gherasimova ◽  
G.L. Povirk
Keyword(s):  
Thin Film ◽  
Tensile Strength ◽  
Tensile Testing ◽  
Metal Film ◽  
Tensile Behavior ◽  
Gold Films ◽  
Free Standing ◽  
Microelectronic Fabrication ◽  
Silicon Frame ◽  
Bulk Gold

ABSTRACTA method for tensile testing thin gold films is presented. Free-standing tensile specimens were prepared by evaporating 0.8 μm of gold onto a patterned oxidized silicon wafer. Using common microelectronic fabrication techniques, free-standing thin film specimens were produced that span rectangular windows in the wafer. The wafer was diced into individual tensile specimens composed of a thin film surrounded by a silicon frame. The final step before testing was to cleave the silicon frame so that the load was completely carried by the metal film. The ultimate tensile strength of the films was found to be approximately 150% greater than that of annealed bulk gold. In contrast, the measured elastic modulus for the thin film specimens was approximately the same as that documented for bulk gold.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

scholarly journals Tunable Perfect THz Absorber Based on a Stretchable Ultrathin Carbon-Polymer Bilayer

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 143 ◽  
Author(s):  
Alesia Paddubskaya ◽  
Marina Demidenko ◽  
Konstantin Batrakov ◽  
Gintaras Valušis ◽  
Tommi Kaplas ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Film ◽  
Sandwich Structure ◽  
Thick Layer ◽  
Pyrolytic Carbon ◽  
Thz Radiation ◽  
Pdms Film ◽  
Absorption Resonance ◽  
Screen Approach ◽  
Polymer Thickness

By exploring the Salisbury screen approach, we propose and demonstrate a thin film absorber of terahertz (THz) radiation. The absorber is comprised of a less than 100 nm thick layer of pyrolytic carbon deposited on a stretchable polydimethylsiloxane (PDMS) film followed by the metal film. We demonstrate that being overall less than 200 microns thick, such a sandwich structure absorbs resonantly up to 99.9%of the incident THz radiation, and that the absorption resonance is determined by the polymer thickness, which can be adjusted by stretching.

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering

Influence of the silicon substrate thickness on the response of thin film pyroelectric detectors

2002 ◽  
Vol 46 (8) ◽  
pp. 1155-1161 ◽  
Author(s):  
Jong Soo Ko ◽  
Weiguo Liu ◽  
Weiguang Zhu ◽  
Byung Man Kwak
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Substrate Thickness ◽  
Pyroelectric Detectors

Experimental Measurement and Analysis of Microelectronics Application Polymer Materials Properties

1992 ◽  
Vol 264 ◽  
Author(s):  
Y.H. Jeng ◽  
Mirng-Ji Lii
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Silicon Substrate ◽  
Coupling Effect ◽  
Measurement Techniques ◽  
Epoxy Adhesive ◽  
Polymer Materials ◽  
Fea Model ◽  
Curvature Measurement ◽  
Substrate Curvature

AbstractA laser based surface scanning technique was utilized to measure the polyimide coated silicon wafer curvature resulting from thermal cycling and mismatch, Meanwhile, mechanical properties of polyimide thin film were characterized by DMA, TMA and tensile test. Based on the obtained material properties, A FEA model was developed to analyze the experimental results -reasonable correlation was obtained.Similar approaches were taken one step further in the MCM silicon substrate curvature measurement. In a MCM package with silicon substrate, epoxy adhesive, and ceramic package, substrate warpage was developed in a thermal cycle due to thermal mismatch between the substrate and the package and coupling effect linked by epoxy adhesive. Three different substrate curvature measurement techniques were applied to identify the substrate curvature and epoxy thin film properties were also well characterized. A 3D FEA model incorporating with the epoxy material properties was developed to analyze the substrate warpage and investigate an optimal package design.

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