scholarly journals Tunable Perfect THz Absorber Based on a Stretchable Ultrathin Carbon-Polymer Bilayer

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 143 ◽  
Author(s):  
Alesia Paddubskaya ◽  
Marina Demidenko ◽  
Konstantin Batrakov ◽  
Gintaras Valušis ◽  
Tommi Kaplas ◽  
...  

By exploring the Salisbury screen approach, we propose and demonstrate a thin film absorber of terahertz (THz) radiation. The absorber is comprised of a less than 100 nm thick layer of pyrolytic carbon deposited on a stretchable polydimethylsiloxane (PDMS) film followed by the metal film. We demonstrate that being overall less than 200 microns thick, such a sandwich structure absorbs resonantly up to 99.9%of the incident THz radiation, and that the absorption resonance is determined by the polymer thickness, which can be adjusted by stretching.

Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...


Carbon ◽  
2003 ◽  
Vol 41 (1) ◽  
pp. 131-138 ◽  
Author(s):  
A Goto ◽  
M Kyotani ◽  
K Tsugawa ◽  
G Piao ◽  
K Akagi ◽  
...  
Keyword(s):  

Author(s):  
A. Capobianchi ◽  
M. P. Casaletto ◽  
S. Kaciulis ◽  
G. Mattogno ◽  
L. Pandolfi ◽  
...  

1999 ◽  
Vol 19 (6-7) ◽  
pp. 1413-1415 ◽  
Author(s):  
Michael Grossmann ◽  
Roland Slowak ◽  
Susanne Hoffmann ◽  
Holger John ◽  
Rainer Waser

1980 ◽  
Vol 7 (1-3) ◽  
pp. 93-96 ◽  
Author(s):  
Marc Burgelman

Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.


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