Detection of Thin Interfacial Layers by Picosecond Ultrasonics

1992 ◽  
Vol 259 ◽  
Author(s):  
G. Tas ◽  
R. J. Stoner ◽  
H. J. Maris ◽  
G. W. Rubloff ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Light Pulse ◽  
Silicon Substrate ◽  
Metal Film ◽  
Thin Layers ◽  
Acoustic Vibrations ◽  
Interfacial Layers ◽  
Heat Flows ◽  
Picosecond Ultrasonics

ABSTRACTWe report on experiments in which the picosecond ultrasonics technique is used to detect the existence of thin layers of CFx at the interface between a metal film (Al) and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The thickness of the CFx can be estimated from the rate at which these vibrations are damped out via transmission of sound into the silicon substrate through the CFx layer. We show that thin CFx layers can also be detected via their effect on the rate at which heat flows from the metal to the silicon.

Picosecond Ultrasonics Studies of the Effect of Ion Implantation on InterfAcial Bonding Between a thin Film and a Substrate

1997 ◽  
Vol 505 ◽  
Author(s):  
G. Tas ◽  
J. J. Loomis ◽  
H. J. Maris ◽  
A. A. Bailes ◽  
L. E. Seiberling
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Metal Film ◽  
Ion Irradiation ◽  
Interfacial Bonding ◽  
Gold Films ◽  
Acoustic Vibrations ◽  
Helium Ions ◽  
Acoustic Damping ◽  
Picosecond Ultrasonics

ABSTRACTWe have used picosecond ultrasonics to study the effects of ion irradiation on the interfacial bonding between gold films and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The rate at which these vibrations damp out via sound transmission across the interface into the substrate gives a measure of the adhesion of the film to the substrate. The films were irradiated with 2.5 MeV helium ions with doses between 7×1014 and 8×1016 ions cm-2. The adhesion, as measured by the rate of acoustic damping, was found to be significantly improved by the ion irradiation.

scholarly journals Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

2016 ◽  
Vol 34 (3) ◽  
pp. 676-683 ◽  
Author(s):  
R. Skonieczny ◽  
P. Popielarski ◽  
W. Bała ◽  
K. Fabisiak ◽  
K. Paprocki ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Silicon Substrate ◽  
Thin Layers ◽  
Excitation Wavelength ◽  
Type Silicon ◽  
Atomic Force ◽  
Before And After ◽  
Evaporation Technique ◽  
Polarized Raman

AbstractThe cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

Nano-Gaps Fabricated by Thermal Evaporation and Stripping Techniques

2021 ◽  
Vol 21 (9) ◽  
pp. 4852-4856
Author(s):  
E Cheng ◽  
Suzhou Tang ◽  
Helin Zou ◽  
Guochao Qiao ◽  
Zhengyan Zhang
Keyword(s):  
Silicon Substrate ◽  
Metal Film ◽  
Thermal Evaporation ◽  
Low Cost ◽  
Adhesive Force ◽  
Metal Films ◽  
Two Dimensional ◽  
Structural Morphology ◽  
Simple Method

The fabrication of inexpensive nano-gaps is vitally important for the research and application of nanochannel-based devices. This study presents a low-cost and simple method for the fabrication of nano-gaps using thermal evaporation and stripping techniques. The structural morphology of metal films deposited on the convex structures of photoresist by sputtering and thermal evaporation was studied. The effect of angles of thermal evaporation on the width of nano-gaps was investigated. The characteristics of metal film deposited on the convex structures of photoresist and spaces between these convex structures after stripping were investigated, and the adhesive force between the metal film and silicon substrate was also analyzed. Finally, a metal film of Cu was deposited on the convex structures of photoresist by thermal evaporation. After stripping, nano-gaps with a width of 187 nm were fabricated. The method proposed in this paper can be employed to mass-produce two-dimensional nanochannels based devices at low cost.

Structural and Chemical Characterization of Cerium Oxide Thin Layers Grown on Silicon Substrate

2015 ◽  
Vol 2 (1) ◽  
pp. 101-107 ◽  
Author(s):  
V. Potin ◽  
J. Lavkova ◽  
S. Bourgeois ◽  
M. Dubau ◽  
I. Matolinova ◽  
...  
Keyword(s):  
Cerium Oxide ◽  
Silicon Substrate ◽  
Chemical Characterization ◽  
Thin Layers

Triple Metal-Film Subwavelength Gratings on Both Sides of a Silicon Substrate for Mid-Infrared polarizers

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
K. Shiraishi ◽  
S. Higuchi ◽  
H. Kakinuma ◽  
J. Shimizu ◽  
H. Yoda ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Metal Film ◽  
Mid Infrared ◽  
Subwavelength Gratings

Microscale Laser Shock Peening of Thin Films, Part 1: Experiment, Modeling and Simulation

2004 ◽  
Vol 126 (1) ◽  
pp. 10-17 ◽  
Author(s):  
Wenwu Zhang ◽  
Y. Lawrence Yao ◽  
I. C. Noyan
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Substrate ◽  
Metal Film ◽  
Shock Pressure ◽  
Laser Shock Peening ◽  
Laser Shock ◽  
Stress Strain ◽  
Laser Shock Processing ◽  
Shock Peening

Microscale Laser Shock Peening (LSP), also known as Laser Shock Processing, is a technique that can be potentially applied to manipulate residual stress distributions in metal film structures and thus improve the fatigue performances of micro-devices made of such films. In this study, microscale LSP of copper films on single crystal silicon substrate is investigated. Before and after-process curvature measurement verifies that sizable compressive residual stress can be induced in copper thin films using microscale LSP. Improved modeling work of shock pressure is summarized and the computed shock pressure is used as loading in 3D stress/strain analysis of the layered film structure. Simulation shows that the stress/strain distribution in the metal film is close to equi-biaxial and is coupled into the silicon substrate.

Temperature dependence of FT-IR absorption and Raman scattering of copper phthalocyanine thin layers deposited on silicon substrate

2006 ◽  
Vol 782 (2-3) ◽  
pp. 177-182 ◽  
Author(s):  
W. Bała ◽  
A. Grodzicki ◽  
P. Piszczek ◽  
M. Wojdyła ◽  
A. Bratkowski ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Silicon Substrate ◽  
Copper Phthalocyanine ◽  
Thin Layers ◽  
Ir Absorption ◽  
Ft Ir

Enhanced Adhesion Strength between Silicon Substrate and Metal Film by Surface Fluorination

2017 ◽  
Vol 46 (11) ◽  
pp. 1643-1645
Author(s):  
Fumihiro Nishimura ◽  
Jae-Ho Kim ◽  
Susumu Yonezawa
Keyword(s):  
Adhesion Strength ◽  
Silicon Substrate ◽  
Metal Film ◽  
Surface Fluorination
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