Laser Recrystallized Polysilicon on Sio2 For High Performance Resistors

1981 ◽  
Vol 5 ◽  
Author(s):  
Rajiv R. Shah ◽  
D. Randy Hollingsworth ◽  
D. Lloyd Crosthwait
Keyword(s):  
Standard Deviation ◽  
Single Crystal ◽  
Temperature Variation ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Temperature Characteristics ◽  
Excellent Control ◽  
First Time

ABSTRACTWe demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω/□ and temperature variation of -5.6% from 25° to 125°C for 1.96kΩ/□, 4.5 × 1014 cm˗2 boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO2. Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.

Electrodeposition of nanometer-thick epitaxial films of silver onto single-crystal silicon wafers

2019 ◽  
Vol 7 (6) ◽  
pp. 1720-1725 ◽  
Author(s):  
Qingzhi Chen ◽  
Jay A. Switzer
Keyword(s):  
Single Crystal ◽  
Electrochemical Method ◽  
Single Crystal Silicon ◽  
Epitaxial Films ◽  
Silicon Wafers ◽  
Silver Acetate ◽  
Crystal Silicon ◽  
Silver Films ◽  
First Time

Silver films were deposited epitaxially for the first time onto low-index, single-crystal silicon wafers through an electrochemical method in an aqueous silver acetate bath.

Temperature characteristics of single-crystal silicon electret microphones

2015 ◽  
Vol 22 (6) ◽  
pp. 3658-3662
Author(s):  
Yoshinobu Yasuno ◽  
Taira Itoh ◽  
Ayako Yamada ◽  
Yasuo Nojima ◽  
Kenichi Kidokoro ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Temperature Characteristics

High-performance conformal sensors employing single-crystal silicon nanomembranes

2014 ◽  
Author(s):  
Xiaochuan Xu ◽  
Harish Subbaraman ◽  
Swapnajit Chakravarty ◽  
Ray T. Chen
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

2005 ◽  
Vol 86 (13) ◽  
pp. 133507 ◽  
Author(s):  
Z.-T. Zhu ◽  
E. Menard ◽  
K. Hurley ◽  
R. G. Nuzzo ◽  
J. A. Rogers
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Plastic Substrates ◽  
Silicon Transistors

High performance single crystal silicon liquid crystal light valve with good image uniformity

1989 ◽  
Vol 28 (22) ◽  
pp. 4748 ◽  
Author(s):  
Keyvan Sayyah ◽  
Murray S. Welkowsky ◽  
Philip G. Reif ◽  
Norman W. Goodwin
Keyword(s):  
Liquid Crystal ◽  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Good Image ◽  
Light Valve

A Polysilicon Tft Parameter Extractor

1998 ◽  
Vol 507 ◽  
Author(s):  
O.K.B. Lui ◽  
S.W.B. Tam ◽  
P. Migliorato
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Interface State ◽  
State Density ◽  
Flat Band ◽  
Crystal Silicon ◽  
Large Size ◽  
Market Opportunities ◽  
Polysilicon Tft ◽  
First Time

ABSTRACTThe achievement of large size displays and the capability of high throughput low temperature laser re-crystallised polysilicon TFTs to provide complex circuitry has opened up new market opportunities, such as the “system on panel” architecture, where the circuitry necessary for the operation of an interactive portable computer is to be fabricated on the display substrate. In the development of polysilicon technology for these applications, device physics and modelling are expected to play a major role as they have done in the case of single crystal silicon. However, polysilicon TFTs present a much higher level of complexity than single crystal devices, due to the presence of grain boundaries and associated defects which drastically affect the electrical properties. For the first time, a polysilicon TFT parameter extractor has been developed based on data from capacitance (C-V) and conductance (I-V) measurements. The method yields the flat band voltage, the front interface state density and the bulk density-of-states (DOS) for the entire range. The method is applied to laser re-crystallised polysilicon TFTs and verified via comparison with 2-D simulation. It is found that this technique allows a much higher degree of accuracy than other methods published so far.

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