A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates

Science ◽  
2006 ◽  
Vol 311 (5758) ◽  
pp. 208-212 ◽  
Author(s):  
D.-Y. Khang
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon

High-performance conformal sensors employing single-crystal silicon nanomembranes

2014 ◽  
Author(s):  
Xiaochuan Xu ◽  
Harish Subbaraman ◽  
Swapnajit Chakravarty ◽  
Ray T. Chen
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

2005 ◽  
Vol 86 (13) ◽  
pp. 133507 ◽  
Author(s):  
Z.-T. Zhu ◽  
E. Menard ◽  
K. Hurley ◽  
R. G. Nuzzo ◽  
J. A. Rogers
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Plastic Substrates ◽  
Silicon Transistors

High performance single crystal silicon liquid crystal light valve with good image uniformity

1989 ◽  
Vol 28 (22) ◽  
pp. 4748 ◽  
Author(s):  
Keyvan Sayyah ◽  
Murray S. Welkowsky ◽  
Philip G. Reif ◽  
Norman W. Goodwin
Keyword(s):  
Liquid Crystal ◽  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Good Image ◽  
Light Valve

Laser Recrystallized Polysilicon on Sio2 For High Performance Resistors

1981 ◽  
Vol 5 ◽  
Author(s):  
Rajiv R. Shah ◽  
D. Randy Hollingsworth ◽  
D. Lloyd Crosthwait
Keyword(s):  
Standard Deviation ◽  
Single Crystal ◽  
Temperature Variation ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Temperature Characteristics ◽  
Excellent Control ◽  
First Time

ABSTRACTWe demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω/□ and temperature variation of -5.6% from 25° to 125°C for 1.96kΩ/□, 4.5 × 1014 cm˗2 boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO2. Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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