Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

2005 ◽  
Vol 86 (13) ◽  
pp. 133507 ◽  
Author(s):  
Z.-T. Zhu ◽  
E. Menard ◽  
K. Hurley ◽  
R. G. Nuzzo ◽  
J. A. Rogers
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Plastic Substrates ◽  
Silicon Transistors

High-performance conformal sensors employing single-crystal silicon nanomembranes

2014 ◽  
Author(s):  
Xiaochuan Xu ◽  
Harish Subbaraman ◽  
Swapnajit Chakravarty ◽  
Ray T. Chen
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

High performance single crystal silicon liquid crystal light valve with good image uniformity

1989 ◽  
Vol 28 (22) ◽  
pp. 4748 ◽  
Author(s):  
Keyvan Sayyah ◽  
Murray S. Welkowsky ◽  
Philip G. Reif ◽  
Norman W. Goodwin
Keyword(s):  
Liquid Crystal ◽  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Good Image ◽  
Light Valve

High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

2006 ◽  
Vol 27 (6) ◽  
pp. 460-462 ◽  
Author(s):  
Jong-Hyun Ahn ◽  
Hoon-Sik Kim ◽  
Keon Jae Lee ◽  
Zhengtao Zhu ◽  
E. Menard ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
Plastic Substrates

Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

1982 ◽  
Vol 3 (12) ◽  
pp. 369-372 ◽  
Author(s):  
N.M. Johnson ◽  
D.K. Biegelsen ◽  
H.C. Tuan ◽  
M.D. Moyer ◽  
L.E. Fennell
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bulk Glass ◽  
Crystal Silicon ◽  
Silicon Transistors

Laser Recrystallized Polysilicon on Sio2 For High Performance Resistors

1981 ◽  
Vol 5 ◽  
Author(s):  
Rajiv R. Shah ◽  
D. Randy Hollingsworth ◽  
D. Lloyd Crosthwait
Keyword(s):  
Standard Deviation ◽  
Single Crystal ◽  
Temperature Variation ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Temperature Characteristics ◽  
Excellent Control ◽  
First Time

ABSTRACTWe demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω/□ and temperature variation of -5.6% from 25° to 125°C for 1.96kΩ/□, 4.5 × 1014 cm˗2 boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO2. Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.

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