Amorphous Silicon Based Waveguides And Light Modulators For Silicon Low-Cost Photonic Integrated Circuits

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Cocorullo ◽  
F. G. Della Corte ◽  
R. De Rosa ◽  
I. Rendina ◽  
A. Rubino ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Amorphous Silicon ◽  
Low Cost ◽  
Switching Frequency ◽  
Fabrication Technology ◽  
Low Loss ◽  
Light Modulators ◽  
Microelectronic Technology ◽  
Infrared Wavelengths ◽  
Silicon Based

AbstractThis paper reports about the fabrication and experimental test of an interferometric light intensity modulator integrated in a low loss (0.7 dB/cm), amorphous silicon based waveguide. It measures approximately 1 mm in length, while its cross section is 30-μm-wide and 3-μm-high. The device, which exploits the strong thermo-optic effect in thin film a-Si for its operation, is designed for application at the infrared wavelengths of 1.3 and 1.55 μm. The measured maximum operating on-off switching frequency of the device is 600 kHz. The very simple fabrication technology involves maximum process temperatures of 230 °C, and is therefore compatible with the standard microelectronic technology. This offers a new opportunity for the integration of optical and electronic functions on the same substrate.

scholarly journals Uniplanar Millimeter-Wave Log-Periodic Dipole Array Antenna Fed by Coplanar Waveguide

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Guohua Zhai ◽  
Yong Cheng ◽  
Qiuyan Yin ◽  
Shouzheng Zhu ◽  
Jianjun Gao
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
Return Loss ◽  
Low Cost ◽  
Coplanar Waveguide ◽  
Antenna Gain ◽  
Low Loss ◽  
Coupled Line ◽  
Field Patterns ◽  
Communication Circuits

A uniplanar millimeter-wave broadband printed log-periodic dipole array (PLPDA) antenna fed by coplanar waveguide (CPW) is introduced. This proposed structure consists of several active dipole elements, feeding lines, parallel coupled line, and the CPW, which are etched on a single metallic layer of the substrate. The parallel coupled line can be optimized to act as a transformer between the CPW and the PLPDA antenna. Meanwhile, this transform performs the task of a balun to achieve a wideband, low cost, low loss, simple directional antenna. The uniplanar nature makes the antenna suitable to be integrated into modern printed communication circuits, especially the monolithic millimeter-wave integrated circuits (MMIC). The antenna has been carefully examined and measured to present the return loss, far-field patterns, and antenna gain.

scholarly journals Low Temperature Nickel Induced Crystallization of Amorphous Silicon Nanorods on Silicon and Glass Substrates

2020 ◽  
Vol 2 (2) ◽  
pp. 164-169
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Amorphous Silicon ◽  
Low Cost ◽  
Nanorod Arrays ◽  
Simple Method ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
3D Integrated Circuits ◽  
Induced Crystallization

In this work, crystallization of amorphous silicon (a-Si) nanorods was done by metal induced crystallization (MIC) method at low temperature (500oC) suitable for circuit applications and low cost, disposable biosensors. The crystallization of a-Si nanorods was investigated by Raman and TEM methods. These data showed oriented crystallized Si nanorods have been obtained by metal induced crystallization (MIC) method on different substrates, which can be suitable for 3D integrated circuits, optical and electrochemical applications. This simple method can be used to produce silicon nanorod arrays with high quality suitable for nanoelectronic and optoelectronic applications.

Propagation of Fundamental Mode in Regularly Bending Multi-Mode Waveguides

2021 ◽  
Author(s):  
Hongyan Yu ◽  
Xinyu Sun ◽  
Dasai Ban ◽  
Feng Qiu
Keyword(s):  
Integrated Circuits ◽  
Fundamental Mode ◽  
Large Scale ◽  
Photonic Integrated Circuits ◽  
Optical Field ◽  
Low Loss ◽  
Scattering Loss ◽  
Bending Radius ◽  
Silicon Based ◽  
Multi Mode

Abstract Transmission of the fundamental mode in multi-mode waveguides is an effective scheme for a silicon-based platform to reduce scattering loss. However, the application of the scheme is usually limited to straight waveguides and restricted in multi-mode bending waveguides. This is because the fundamental mode of a straight waveguide is seriously disordered after passing the bend. In this work, we have presented a “matched bending radius” approach, by which an ultra-low loss and negligible modal disorder have been demonstrated in the Si and Si3N4 multi-mode waveguides. The estimated optical field overlap factor is almost 0 dB at the matched bending radius, indicating that the fundamental mode can be re-generated after passing the multi-mode bending waveguide. The proposed approach will contribute to applying the low loss scheme in large-scale photonic integrated circuits.

Silicon-Oxynitride (SiON) for Photonic Integrated Circuits

1999 ◽  
Vol 574 ◽  
Author(s):  
H. W. M. Salemink ◽  
F. Horst ◽  
R. Germann ◽  
B. J. Offrein ◽  
G. L. Bona
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Optical Loss ◽  
Silicon Oxynitride ◽  
Core Material ◽  
Radius Of Curvature ◽  
Index Contrast ◽  
High Dielectric ◽  
Silicon Based ◽  
Device Properties

AbstractWe report on the fabrication and analysis of silicon-oxynitride (SiON) as core material for silicon-based planar photonic waveguide circuits. Features of devices made of this particular SiON material are: (1) a silicon-compatible technology (low-cost perspective), (2) a waveguide structure with high dielectric index contrast, allowing a very compact device layout (approximately 10× smaller radius of curvature than conventional doped SiO2 technology), (3) a low optical loss < 0.15 dB/cm, in the 1550 nm telecommunication window and (4) a negligible polarization dependence. The materials aspects and resulting analyses of the SiON layers as well as particular device properties are described.

Fabrication of Nanochannels in Silicon and Polymers

2008 ◽  
Author(s):  
Nam-Trung Nguyen ◽  
Patrick Abgrall
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Etch Rate ◽  
Low Cost ◽  
Hot Embossing ◽  
Anodic Bonding ◽  
Fabrication Technology ◽  
Thermal Bonding ◽  
Silicon Based

This paper reports the fabrication of planar nanochannels in silicon and thermoplastic. Conventional technologies such as reactive ion etching (RIE) and anodic bonding were used for fabricating the silicon-based nanochannels, while hot embossing and thermal bonding were used for polymer-based nanochannels. Due to the limit of photolithography, the lateral dimension of the channels are kept on the order of micrometers. The depth can be controlled precisely by etch rate or deposition rate. While fabrication technologies for nanochannels in silicon and glass are established and straightforward to implement, fabrication of planar nanochannels in a plastic is challenging because of the more severe collapsing of the structure during bonding. Besides the silicon technology, we demonstrate a simple and low-cost fabrication technology of planar nanochannels by hot-embossing in a thermoplastic and bonding below the glass transition temperature.

Low-cost amorphous-silicon-based 160x120 uncooled microbolometer 2D array for high-volume applications

2003 ◽  
Author(s):  
Jean-Luc Tissot ◽  
Astrid Astier ◽  
Jean-Pierre Chatard ◽  
Sebastien Tinnes ◽  
Cyrille Trouilleau ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Low Cost ◽  
High Volume ◽  
Uncooled Microbolometer ◽  
Silicon Based ◽  
2D Array

Amorphous Silicon Based TFT and MIS Nonvolatile Memories

2007 ◽  
Vol 989 ◽  
Author(s):  
Yue Kuo ◽  
Helinda Nominanda
Keyword(s):  
Amorphous Silicon ◽  
Gate Dielectric ◽  
Low Cost ◽  
Flat Band ◽  
Nonvolatile Memories ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
A Charge ◽  
Silicon Based

AbstractThe amorphous silicon (a-Si:H) TFT and MIS capacitor, which include an a-Si:H layer embedded in the silicon nitride gate dielectric layer, have been prepared and characterized for memory functions. Large shifts of the threshold voltage and flat band voltage were detected in the current-voltage and capacitance-voltage hysteresis measurements. The embedded a-Si:H film functioned as a charge retention medium that stores and releases injected carriers. The devices memory capacity varied with the thickness of the embedded a-Si:H layer and the sweep voltage. These low-cost memory devices can be used in many low-temperature prepared circuits.

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