Silicon-Oxynitride (SiON) for Photonic Integrated Circuits

1999 ◽  
Vol 574 ◽  
Author(s):  
H. W. M. Salemink ◽  
F. Horst ◽  
R. Germann ◽  
B. J. Offrein ◽  
G. L. Bona
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Optical Loss ◽  
Silicon Oxynitride ◽  
Core Material ◽  
Radius Of Curvature ◽  
Index Contrast ◽  
High Dielectric ◽  
Silicon Based ◽  
Device Properties

AbstractWe report on the fabrication and analysis of silicon-oxynitride (SiON) as core material for silicon-based planar photonic waveguide circuits. Features of devices made of this particular SiON material are: (1) a silicon-compatible technology (low-cost perspective), (2) a waveguide structure with high dielectric index contrast, allowing a very compact device layout (approximately 10× smaller radius of curvature than conventional doped SiO2 technology), (3) a low optical loss < 0.15 dB/cm, in the 1550 nm telecommunication window and (4) a negligible polarization dependence. The materials aspects and resulting analyses of the SiON layers as well as particular device properties are described.

scholarly journals A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 236 ◽  
Author(s):  
Wonseok Choe ◽  
Jinho Jeong
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Low Cost ◽  
Three Dimensional ◽  
Equivalent Circuit Model ◽  
Dipole Antenna ◽  
Impedance Match ◽  
Inp Substrate ◽  
On Chip ◽  
High Dielectric

A waveguide-to-microstrip transition is an essential component for packaging integrated circuits (ICs) in rectangular waveguides, especially at millimeter-wave and terahertz (THz) frequencies. At THz frequencies, the on-chip transitions, which are monolithically integrated in ICs are preferred to off-chip transitions, as the former can eliminate the wire-bonding process, which can cause severe impedance mismatch and additional insertion loss of the transitions. Therefore, on-chip transitions can allow the production of low cost and repeatable THz modules. However, on-chip transitions show limited performance in insertion loss and bandwidth, more seriously, this is an in-band resonance issue. These problems are mainly caused by the substrate used in the THz ICs, such as an indium phosphide (InP), which exhibits a high dielectric constant, high dielectric loss, and high thickness, compared with the size of THz waveguides. In this work, we propose a broadband THz on-chip transition using a dipole antenna with an integrated balun in the InP substrate. The transition is designed using three-dimensional electromagnetic (EM) simulations based on the equivalent circuit model. We show that in-band resonances can be induced within the InP substrate and also prove that backside vias can effectively eliminate these resonances. Measurement of the fabricated on-chip transition in 250 nm InP heterojunction bipolar transistor (HBT) technology, shows wideband impedance match and low insertion loss at H-band frequencies (220–320 GHz), without in-band resonances, due to the properly placed backside vias.

Amorphous Silicon Based Waveguides And Light Modulators For Silicon Low-Cost Photonic Integrated Circuits

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Cocorullo ◽  
F. G. Della Corte ◽  
R. De Rosa ◽  
I. Rendina ◽  
A. Rubino ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Amorphous Silicon ◽  
Low Cost ◽  
Switching Frequency ◽  
Fabrication Technology ◽  
Low Loss ◽  
Light Modulators ◽  
Microelectronic Technology ◽  
Infrared Wavelengths ◽  
Silicon Based

AbstractThis paper reports about the fabrication and experimental test of an interferometric light intensity modulator integrated in a low loss (0.7 dB/cm), amorphous silicon based waveguide. It measures approximately 1 mm in length, while its cross section is 30-μm-wide and 3-μm-high. The device, which exploits the strong thermo-optic effect in thin film a-Si for its operation, is designed for application at the infrared wavelengths of 1.3 and 1.55 μm. The measured maximum operating on-off switching frequency of the device is 600 kHz. The very simple fabrication technology involves maximum process temperatures of 230 °C, and is therefore compatible with the standard microelectronic technology. This offers a new opportunity for the integration of optical and electronic functions on the same substrate.

A Low Temperature Photonic Crystal Technology for Integration with Modern CMOS Technologies

2007 ◽  
Vol 990 ◽  
Author(s):  
Khadijeh Bayat ◽  
Mahdi Farrokh Baroughi ◽  
Sujeet K. Chaudhuri ◽  
Safieddin Safavi-Naeini
Keyword(s):  
Photonic Crystal ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Gas Phase ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Refractive Indices ◽  
Optical Integrated Circuits ◽  
Silicon Based

ABSTRACTIn this paper, low temperature amorphous silicon oxynitride (a-SixOyNz:H) thin film technology is proposed for implementation of CMOS compatible photonic crystal (PC) based optical integrated circuits (OICs). The a-SixOyNz films of different refractive indices were developed by plasma enhanced chemical vapor deposition (PECVD) technique using silane, nitrous oxide, and ammonia as gas phase precursors at 300°C. The films with refractive index between 1.43 − 1.75 were obtained by changing gas flow ratios. Such thin films can be used as cladding and core layers in photonic crystal structure.The bandgap and guiding properties of the a-SixOyNz based PCs were simulated and was shown that the a-SixOyNz:H based PC technology offers larger feature sizes than a conventional silicon based photonic crystals.

Opportunities for Low Cost Processing of Erbium 8-Quinolinolates for Active Integrated Photonic Applications

2016 ◽  
Vol 16 (4) ◽  
pp. 3360-3363 ◽  
Author(s):  
Stefano Penna ◽  
Leonardo Mattiello ◽  
Silvia Di Bartolo ◽  
Angelo Pizzoleo ◽  
Vincenzo Attanasio ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Core Material ◽  
Active Materials ◽  
Optical Process ◽  
Active Core ◽  
Erbium Doped ◽  
Er Doped

Erbium-doped organic emitters are promising active materials for Photonic Integrated Circuits (PICs) due to their emission shown at 1550 nm combined to the potential low cost processing. In particular, Erbium Quinoline (ErQ) gained a strong interest in the last decade for the good emission efficiency. This contribution reports the results derived from the application of ErQ as active core material within a buried optical waveguide, following the development of a purposed optical process to control the refractive index of ErQ and then to define a patterned structure from a single thin film deposition step. The reported results show the potential of Er-doped organic materials for low cost processing and application to planar PICs.

scholarly journals High and Low Dielectric Constant Materials

1999 ◽  
Vol 8 (2) ◽  
pp. 26-30
Author(s):  
Rajenda Singh ◽  
Richard K. Ulrich
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
A Value ◽  
Silicon Integrated Circuits ◽  
Low Dielectric Constant Materials ◽  
High Dielectric ◽  
Silicon Based

Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reported for relaxor ferroelectric (k = 24,700 at 1 kHz).

Silicon-Based Optoelectronics

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 16-19 ◽  
Author(s):  
Salvatore Coffa ◽  
Leonid Tsybeskov
Keyword(s):  
Integrated Circuits ◽  
Data Transfer ◽  
Light Emission ◽  
Low Cost ◽  
Communication Technologies ◽  
Local Area ◽  
Long Distance ◽  
Optical Functions ◽  
The Moment ◽  
Silicon Based

The enormous progress of communication technologies in the last years has increased the demand for efficient and low-cost optoelectronic functions. For several present and future applications, photonic materials—in which light can be generated, guided, modulated, amplified, and detected—need to be integrated with standard electronic circuits in order to combine the information-processing capabilities of electronics data transfer and the speed of light. Long-distance communications, local-area-networks data transfer, and chip-to-chip or even intrachip optical communications all require the development of efficient optical functions and their integration with state-of-the-art electronic functions. Silicon is the material of choice for reliable and low-cost optoelectronic integrated circuits because it is the leading semiconductor in the electronic arena and since a wellestablished processing technology exists for this material. However Si is characterized by an indirect bandgap and by a weak electro-optic effect. It is therefore not suitable for the implementation of fundamental optical functions such as light emission and modulation. At the moment, hybrid integration of compound-semiconductor optical functions with Si electronic functions is providing the gateway from electronic to photonic technology. However several strategies are being considered to engineer the optical functions of Si and to realize fully Si-based or at least Si-compatible optoelectronics.

scholarly journals In-Plane Monolithic Integration of Scaled III-V Photonic Devices

2021 ◽  
Vol 11 (4) ◽  
pp. 1887
Author(s):  
Markus Scherrer ◽  
Noelia Vico Triviño ◽  
Svenja Mauthe ◽  
Preksha Tiwari ◽  
Heinz Schmid ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Cost ◽  
Photonic Devices ◽  
Monolithic Integration ◽  
Light Emitters ◽  
Fully Integrated ◽  
Large Lattice ◽  
Hybrid Iii ◽  
Gain Material

It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrated circuits but inherently challenging due to the large lattice and thermal mismatch with Si. Here, we briefly review different approaches to monolithic III-V integration while focusing on discussing the results achieved using an integration technique called template-assisted selective epitaxy (TASE), which provides some unique opportunities compared to existing state-of-the-art approaches. This method relies on the selective replacement of a prepatterned silicon structure with III-V material and thereby achieves the self-aligned in-plane monolithic integration of III-Vs on silicon. In our group, we have realized several embodiments of TASE for different applications; here, we will focus specifically on in-plane integrated photonic structures due to the ease with which these can be coupled to SOI waveguides and the inherent in-plane doping orientation, which is beneficial to waveguide-coupled architectures. In particular, we will discuss light emitters based on hybrid III-V/Si photonic crystal structures and high-speed InGaAs detectors, both covering the entire telecom wavelength spectral range. This opens a new path towards the realization of fully integrated, densely packed, and scalable photonic integrated circuits.

scholarly journals Fabrication of Porous Silicon Based Humidity Sensing Elements on Paper

2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
Tero Jalkanen ◽  
Anni Määttänen ◽  
Ermei Mäkilä ◽  
Jaani Tuura ◽  
Martti Kaasalainen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Smart Cities ◽  
Low Cost ◽  
Electrical Characterization ◽  
Fabrication Process ◽  
Sensing Element ◽  
Paper Substrate ◽  
Roll To Roll ◽  
Silver Electrodes ◽  
Silicon Based

A roll-to-roll compatible fabrication process of porous silicon (pSi) based sensing elements for a real-time humidity monitoring is described. The sensing elements, consisting of printed interdigitated silver electrodes and a spray-coated pSi layer, were fabricated on a coated paper substrate by a two-step process. Capacitive and resistive responses of the sensing elements were examined under different concentrations of humidity. More than a three orders of magnitude reproducible decrease in resistance was measured when the relative humidity (RH) was increased from 0% to 90%. A relatively fast recovery without the need of any refreshing methods was observed with a change in RH. Humidity background signal and hysteresis arising from the paper substrate were dependent on the thickness of sensing pSi layer. Hysteresis in most optimal sensing element setup (a thick pSi layer) was still noticeable but not detrimental for the sensing. In addition to electrical characterization of sensing elements, thermal degradation and moisture adsorption properties of the paper substrate were examined in connection to the fabrication process of the silver electrodes and the moisture sensitivity of the paper. The results pave the way towards the development of low-cost humidity sensors which could be utilized, for example, in smart packaging applications or in smart cities to monitor the environment.

Materials Selection for Sandwich Pipes Under the Combined Effect of Pressure, Bending and Temperature

2007 ◽  
Author(s):  
Allan R. de Souza ◽  
Theodoro A. Netto ◽  
Ilson P. Pasqualino
Keyword(s):  
Structural Strength ◽  
Material Selection ◽  
Low Cost ◽  
Polymeric Materials ◽  
External Pressure ◽  
Core Material ◽  
Annular Layer ◽  
Oil And Natural Gas ◽  
Longitudinal Bending ◽  
Logic Approach

Recent researches point to the great potential of the sandwich pipe conception for ultra deepwater exploitation and production of oil and natural gas. Its configuration is very simple and comprises two concentric metallic pipes with a core material, polymeric or ceramic, in the annulus. The main functions of the annular layer are: to provide satisfactory thermal insulation so as to avoid the formation of wax and hydrates along the pipeline during production shutdown; to improve the overall structural strength of the system. Polypropylene and cement have been recently proposed for these applications. The reason for the choice of these materials was the low cost and the extensive availability in industry. Here a systematic material selection approach is employed in order to assess the applicability of other polymeric materials. The attributes of materials needed to meet the design specification are thoroughly studied. The list of possible materials was enlarged and the modified digital logic approach is used with the purpose to define a top group of materials for further numerical comparative study. Finite element analyses are carried out to assess the structural strength of the sandwich pipe under pure external pressure or longitudinal bending and combined external pressure and bending. Additionally, the effect of thermal gradient is included to the numerical analyses to evaluate each pre-selected material of the top group. Results indicate that other potential materials such as PEEK and polycarbonate can improve the structural performance of the sandwich pipe conception and yet meet other several design criteria.

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