Gallium Nitride Multioperate Optoelectronic Devices

1997 ◽  
Vol 482 ◽  
Author(s):  
V. G. Sidorov ◽  
A. G. Drizhuk ◽  
D. V. Sidorov
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Optoelectronic Devices ◽  
Light Emitting ◽  
Gan Led ◽  
Device Properties

AbstractOpportunity of creation of several optoelectronic devices such as optron, photoreceiver, switch device, IR-to-visible signal transformer and others based on i-n-GaN light emitting diodes (LED) is shown. Technology and properties of GaN LED in relation to the desired device properties are discussed. A discussion of issues relating to electrical and optical positive feed back between the device elements is also included.

ESD-Reliability Analysis and Strategy of the GaN-Based Light-Emitting Diodes

2015 ◽  
Vol 656-657 ◽  
pp. 57-62
Author(s):  
Shen Li Chen ◽  
Shawn Chang ◽  
Chun Hsing Shih ◽  
H.H. Chen
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Laser Diodes ◽  
Physical Property ◽  
Luminous Efficiency ◽  
Blue Laser ◽  
Light Emitting ◽  
Manufacture Process ◽  
Gan Led ◽  
Transient Events

Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. Although the gallium nitride has excellent physical properties, but in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in HBM, MM reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping

2014 ◽  
Vol 6 (19) ◽  
pp. 16601-16609 ◽  
Author(s):  
Su Jin Kim ◽  
Kyeong Heon Kim ◽  
Ho Young Chung ◽  
Hee Woong Shin ◽  
Byeong Ryong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Current Transport ◽  
Light Emitting

Mixed Dimensional 0D/3D Perovskite Heterostructure for Efficient Green Light Emitting Diodes

2021 ◽  
Author(s):  
Lyuchao Zhuang ◽  
Lingling Zhai ◽  
Yanyong Li ◽  
Ren Hui ◽  
Mingjie Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Optoelectronic Devices ◽  
Green Light ◽  
Metal Halide ◽  
Next Generation ◽  
Light Emitting ◽  
Photoelectric Characteristics ◽  
Halide Perovskites

Metal halide perovskites are emerging materials for next-generation optoelectronic devices, of which all-inorganic CsPbBr3 perovskite has attracted increasing attention due to outstanding stability and excellent photoelectric characteristics compared with organic-inorganic...

Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm

2006 ◽  
Vol 203 (7) ◽  
pp. 1783-1786 ◽  
Author(s):  
P. Morgan Pattison ◽  
Rajat Sharma ◽  
Aurelian David ◽  
Ichitaro Waki ◽  
Claude Weisbuch ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Micro Cavity

scholarly journals Nanofabrication of gallium nitride photonic crystal light-emitting diodes

2010 ◽  
Vol 87 (11) ◽  
pp. 2200-2207 ◽  
Author(s):  
Ali Z. Khokhar ◽  
Keith Parsons ◽  
Graham Hubbard ◽  
Faiz Rahman ◽  
Douglas S. Macintyre ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Light Emitting

High extraction efficiency in GaN-based light-emitting diodes with air-hole photonic crystal slab

2014 ◽  
Vol 28 (21) ◽  
pp. 1450173 ◽  
Author(s):  
Dan Liu ◽  
Hui Liu ◽  
Jin Hou ◽  
Yihua Gao
Keyword(s):  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Three Dimensional ◽  
Expansion Method ◽  
Light Emitting ◽  
Hole Radius ◽  
Parameters Tuning ◽  
Gan Led ◽  
Air Hole

In this paper, extraction efficiency in simplified and layered light-emitting diodes (LEDs) of GaN photonic crystal with periodic air holes is studied by three-dimensional finite-difference time-domain method. Photonic band structures of the photonic crystal are obtained by plane-wave expansion method. The results about simplified GaN -LED show that extraction efficiency is very sensitive to the structure parameters tuning, and increases considerably inside the transverse-electric-like gap region. A maximum extraction efficiency above 90% can be achieved. The effects of the PC thickness and air-hole radius on relative extraction efficiency of layered GaN -LED are analyzed. They show optimal values to obtain high relative extraction efficiency.

scholarly journals Editorial of Special Issue “Nanostructured Light-Emitters”

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 601
Author(s):  
Hieu P. T. Nguyen
Keyword(s):  
Nanostructured Materials ◽  
Light Emitting Diodes ◽  
Laser Diodes ◽  
Optoelectronic Devices ◽  
Special Issue ◽  
Significant Progress ◽  
Light Emitters ◽  
Light Emitting ◽  
Nanophotonic Devices ◽  
Made In

Significant progress has been made in the development of nanophotonic devices and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, has recently attracted tremendous attention due to the fact of their unique geometry [...]

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