Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm

2006 ◽  
Vol 203 (7) ◽  
pp. 1783-1786 ◽  
Author(s):  
P. Morgan Pattison ◽  
Rajat Sharma ◽  
Aurelian David ◽  
Ichitaro Waki ◽  
Claude Weisbuch ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Micro Cavity

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping

2014 ◽  
Vol 6 (19) ◽  
pp. 16601-16609 ◽  
Author(s):  
Su Jin Kim ◽  
Kyeong Heon Kim ◽  
Ho Young Chung ◽  
Hee Woong Shin ◽  
Byeong Ryong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Current Transport ◽  
Light Emitting

scholarly journals Nanofabrication of gallium nitride photonic crystal light-emitting diodes

2010 ◽  
Vol 87 (11) ◽  
pp. 2200-2207 ◽  
Author(s):  
Ali Z. Khokhar ◽  
Keith Parsons ◽  
Graham Hubbard ◽  
Faiz Rahman ◽  
Douglas S. Macintyre ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Light Emitting

Straight-forward control of the degree of micro-cavity effects in organic light-emitting diodes based on a thin striped metal layer

2013 ◽  
Vol 14 (10) ◽  
pp. 2444-2450 ◽  
Author(s):  
Jonghee Lee ◽  
Hyunsu Cho ◽  
Tae-Wook Koh ◽  
Simone Hofmann ◽  
Yong Hyun Kim ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Metal Layer ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Cavity Effects ◽  
Micro Cavity

Electrical and Optical Characterisation of Homojjunction Gallium Nitride Light Emitting Diodes

1997 ◽  
Vol 482 ◽  
Author(s):  
G M Laws ◽  
J Morgan ◽  
G B Ren ◽  
I Harrison ◽  
E C Larkins ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Full Width Half Maximum ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Deep Level Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractWe report on the fabrication and characterisation gallium nitride light emitting diodes (LEDs) grown by molecular beam epitaxy on (0001) oriented sapphire and (111)B GaAs substrates. The current voltage characteristics of the devices grown on sapphire show turn on voltages of between 4 and 5V with large on-series resistance of 600Ω; for corresponding devices grown on GaAs these parameters are between 6 and 7V and 150 Ω, respectively.Room temperature electroluminescence (EL) spectra from the GaN LEDs ,grown on sapphire substrates, show a dominant emission at 3.2 eV (397nm) with a full width half maximum (FWHM) of 335 meV which is attributed to free electron to acceptor transitions (e, A−Mg). A broad low intensity deep level emission is also observed centred at 2.4 eV (506nm). The peak of the EL from the devices grown on GaAs is at 3.1eV rather than 3.2eV. The differences between the two sets of devices are probably caused by the different device geometry.Preliminary results show that an “annealing” effect caused by electrical stressing resulted in an improvement of the EL spectra. The stressed samples show an increase in the near band edge emission intensity, a 20meV reduction in the FWHM and a significant reduction in the intensity of the deep level emission. The devices have a large 1/f noise contribution which does not appear to change after electrical stressing.

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